MOSFET MASPOWER MS120P20HDC1 featuring low RDSon 55m and 200V drain source voltage for power supplies
Key Attributes
Model Number:
MS120P20HDC1
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
120A
RDS(on):
55mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
480pF
Input Capacitance(Ciss):
75nF
Output Capacitance(Coss):
2.55nF
Gate Charge(Qg):
730nC@10V
Mfr. Part #:
MS120P20HDC1
Package:
TO-247PLUS
Product Description
Product Overview
The MS120P20HDC1 is a high-performance Maspower MOSFET designed for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching applications. It features a VDS of -200V, ID of -120A, and a low RDS(on) of 55m at -1A. Key advantages include low gate charge and improved dv/dt capability, making it suitable for hard-switched and high-frequency circuits.
Product Attributes
- Brand: Maspower
- Model: MS120P20HDC1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | -200 | V | |||
| Transient Gate-Source Voltage | VGSM | 30 | V | |||
| Continuous Gate-Source Voltage | VGSS | 20 | V | |||
| Drain Current-continuous | ID | -120 | A | |||
| Drain Current-pulse(note1) | IDM | -480 | A | |||
| Repetitive Avalanche Current (note1) | IAR | -35 | A | |||
| Single Pulsed Avalanche Energy (note2) | EAS | 6125 | mJ | |||
| Peak Diode Recovery dv/dt(note3) | dv/dt | 10 | V/ns | |||
| Maximum Power Dissipation | PD | TC=25 | 1041 | W | ||
| Maximum Power Dissipation | PD | TC=100 | 416 | |||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Maximum lead temperature for soldering | TL | 300 | ||||
| Electrical Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=-250A,VGS=0V | -250 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS,VGS=0V | -20 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -2.0 | -3.0 | -4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V,ID=-1A (note4) | 55 | 70 | m | |
| Forward Transconductance | gfs | VGS=-10V,ID=-60A (note4) | 90 | 125 | S | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=-25V, VGS=0V, f=1.0MHz (note5) | 75 | nF | ||
| Output capacitance | Coss | 25 | pF | |||
| Reverse transfer capacitance | Crss | 48 | pF | |||
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDS=-100V, ID=-60A, VGS=-10V | 88 | ns | ||
| Turn-On rise time | tr | 82 | ns | |||
| Turn-Off delay time | td(Off) | 192 | ns | |||
| Turn-Off rise time | tf | 49 | ns | |||
| Total Gate Charge | Qg | VDS=-100V, ID=-60A, VGS=-10V (note5) | 730 | nC | ||
| Gate-Source charge | Qgs | 210 | nC | |||
| Gate-Drain charge | Qgd | 138 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=-1A(note4) | -1.2 | V | ||
| Diode Forward Current | IS | TC=25 | -120 | A | ||
| Reverse recovery time | Trr | IS=-60A,-di/dt=-100A/s | 180 | ns | ||
| Reverse recovery charge | Qrr | 1400 | nC | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,junction to Case,Max | Rth(J-C) | 0.12 | /W | |||
| Thermal Resistance,junction to Ambient | Rth(J-A) | 40 | /W | |||
2508261540_MASPOWER-MS120P20HDC1_C50726502.pdf
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