Power MOSFET MASPOWER MS330N15JDF4 with fast switching speeds and high avalanche current capability
Key Attributes
Model Number:
MS330N15JDF4
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
330A
RDS(on):
4.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
630pF
Number:
1 N-channel
Output Capacitance(Coss):
2.7nF
Pd - Power Dissipation:
893W
Input Capacitance(Ciss):
47nF
Gate Charge(Qg):
650nC
Mfr. Part #:
MS330N15JDF4
Package:
SOT-227
Product Description
Product Overview
The MS330N15JDF4(C0) is a high-performance power MOSFET from Maspower, designed for efficient power switching applications. It features low RDS(on), fast switching speeds, 100% avalanche tested, low package inductance, a low intrinsic rectifier, and high current handling capabilities. This device is suitable for a wide range of applications including DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power supplies, and linear current regulators.
Product Attributes
- Brand: Maspower
- Model: MS330N15JDF4(C0)
Technical Specifications
| Parameter | Symbol | SOT-227 (TC=25) | TO-247 (TC=25) | Unit | Conditions |
| Drain-Source Voltage | VDSS | 150 | V | ||
| Drain Current - continuous | ID | 330 (T=25) | 165 (T=100) | A | |
| Drain Current - pulse | IDM | 1320 | A | (note 1) | |
| Gate-Source Voltage | VGSS | 30 | V | ||
| Single Pulsed Avalanche Energy | EAS | 4000 | mJ | (note 2) | |
| Avalanche Current | IAR | 100 | A | (note 1) | |
| Repetitive Avalanche Current | EAR | 64 | mJ | (note 1) | |
| Peak Diode Recovery dv/dt | dv/dt | 20 | V/ns | (note 3) | |
| Power Dissipation | PD | 893 | 463 | W | TC=25 |
| Derate above 25 | 5.96 | 3.08 | W/ | ||
| Operating and Storage Temperature | Tj,TSTG | -55~+150 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | |||
| Isolation voltage for terminal to case | VISO | 3000 | V | (IISOL1mA,t=1s,DC) | |
| Drain-Source Voltage Breakdown Voltage Temperature Coefficient | BVDSS /TJ | - 0.16 | V/ | ID=250A, referenced to 25 | |
| Drain cut-off current | IDSS | 100 (Tj=25) | A | VDS=70V,VGS=0V | |
| Drain cut-off current | IDSS | 2000 (Tj=125) | A | VDS=70V | |
| Gate-body leakage current,forward | IGSSF | 500 | nA | VDS=0V,VGS=30V | |
| Gate-body leakage current,reverse | IGSSR | -500 | nA | VDS=0V,VGS=-30V | |
| Gate Threshold Voltage | VGS(th) | 2.5 - 4.5 | V | VDS=VGS,ID=250uA | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.8 - 4.5 | m | VGS=10V,ID=20A (note 3) | |
| Forward Transconductance | gfs | 220 | S | VDS =10V , ID=60A (note 3) | |
| Input capacitance | Ciss | 47 | nF | VDS=25V, VGS=0V, f=1.0MHz | |
| Output capacitance | Coss | 2700 | pF | ||
| Reverse transfer capacitance | Crss | 630 | pF | ||
| Turn-On delay time | td(on) | 90 | ns | VDD=35V,ID=165A, RG=5 VGS=10V(note 4,5) | |
| Turn-On rise time | tr | 185 | ns | ||
| Turn-Off delay time | Td(off) | 170 | ns | ||
| Turn-Off Fall time | tf | 240 | ns | ||
| Total Gate Charge | Qg | 650 | nC | VDS=50V, ID=165A | |
| Gate-Source charge | Qgs | 112 | nC | ||
| Gate-Drain charge | Qgd | 206 | nC | VGS=10V(note4,5) | |
| Drain-Source Diode Forward Voltage | VSD | 0.67 - 1.2 | V | VGS=0V,IS=1A (note 3) | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 330 | A | ||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 1320 | A | ||
| Reverse recovery time | trr | 95 | ns | VGS=0V,IF=50A dIF/dt=100A/us(note 3) | |
| Reverse recovery charge | Qrr | 1.23 | uC | ||
| Thermal Resistance, Junction-to-Case | RJC | 0.14 | 0.27 | /W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 40 | 62.5 | /W | |
2411220032_MASPOWER-MS330N15JDF4_C41417736.pdf
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