Surface Mount N Channel MOSFET MCC SI2306 TP Featuring Low On Resistance and Halogen Free Compliance
Key Attributes
Model Number:
SI2306-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
305pF
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
4.5nC@5V
Mfr. Part #:
SI2306-TP
Package:
SOT-23
Product Description
Product Overview
The SI2306 is an N-Channel MOSFET featuring a high-density cell design for extremely low RDS(ON). It is rugged, reliable, and comes in a surface-mount package. This device meets UL 94 V-0 flammability rating, has a Moisture Sensitivity Level 1, and is Halogen Free and RoHS Compliant. It is suitable for applications requiring efficient power switching and low on-resistance.
Product Attributes
- Brand: MCCSEMI
- Device Type: N-Channel MOSFET
- Package: SOT-23
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Drain Current-Continuous | ID | 3.16 | A | Note 2, 3 |
| Drain Current-Pulse | IDM | 20 | A | |
| Source Current-Continuous | IS | 0.62 | A | Note 2, 3 |
| Power Dissipation | PD | 0.75 | W | |
| Operating Junction Temperature Range | -55 to +150 | C | ||
| Storage Temperature | -55 to +150 | C | ||
| Thermal Resistance Junction to Ambient | 100 | C/W | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250A |
| Gate-Threshold Voltage | VGS(th) | 1.0 to 3.0 | V | VDS=VGS, ID=250A |
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Zero Gate Voltage Drain Current | IDSS | 0.5 | A | VDS=30V, VGS=0V |
| Drain-Source On-Resistance | RDS(on) | 47 | m | VGS=10V, ID=3.5A |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1.25A |
| Input Capacitance | Ciss | 305 | pF | VDS=15V,VGS=0V, f=1MHz |
| Output Capacitance | Coss | 65 | pF | VDS=15V,VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 29 | pF | VDS=15V,VGS=0V, f=1MHz |
| Total Gate Charge | Qg | 11 | nC | VDS=15V,VGS=10V,ID=2.5A |
| Gate Charge | Qgt | 3.0 | nC | VDS=15V,VGS=10V,ID=2.5A |
| Gate-Source Charge | Qgs | 6 | nC | VDS=15V,VGS=10V,ID=2.5A |
| Turn-On Delay Time | td(on) | 18 | ns | VDD=15V,RL=15,VGEN=10V, ID=1A,RG=6 |
| Turn-On Rise Time | tr | 10 | ns | VDD=15V,RL=15,VGEN=10V, ID=1A,RG=6 |
| Turn-Off Delay Time | td(off) | 25 | ns | VDD=15V,RL=15,VGEN=10V, ID=1A,RG=6 |
| Turn-Off Fall Time | tf | 6 | ns | VDD=15V,RL=15,VGEN=10V, ID=1A,RG=6 |
| Forward Transconductance | gFS | 7.0 | S | VDS=4.5V, ID=2.5A |
| Gate Resistance | Rg | 7.5 | f=1MHz | |
| Gate-Drain Charge | Qgd | 0.6 | nC | VDS=15V,VGS=5V,ID=2.5A |
Note:
- 1. Halogen free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- 2. Surface Mounted on 1" x1" FR4 Board, t<5s.
- 3. Pulse Width Limited by Maximum Junction Temperature.
- 4. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Ordering Information:
| Device | Packing | Part Number |
|---|---|---|
| SI2306 | Tape&Reel: 3Kpcs/Reel | ***-TP |
2409302332_MCC-SI2306-TP_C2975463.pdf
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