load switch solution LRC LP4565T1G P Channel MOSFET with 60 Volt rating and trench technology design

Key Attributes
Model Number: LP4565T1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 P-Channel
Output Capacitance(Coss):
84pF
Pd - Power Dissipation:
2.9W
Input Capacitance(Ciss):
1.146nF
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
LP4565T1G
Package:
SO-8
Product Description

Product Overview

The Leshan Radio Company, LTD. P-Channel 60-V (D-S) MOSFET, specifically the LP4565T1G and LP4565 models, utilizes low RDS(on) trench technology for efficient performance. It features low thermal impedance and fast switching speeds, making it suitable for applications such as load switches, DC/DC conversion, and motor drives. This MOSFET is designed for reliability and performance in various industrial and electronic systems.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Technology: P-Channel, Trench Technology
  • Voltage Rating: 60-V (Drain-to-Source)
  • Package Type: SO-8

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings (Ta = 25C unless otherwise stated)
DraintoSource Voltage VDSS -60 V
GatetoSource Voltage VGS 20 V
Continuous Drain Current (Note 1) ID TA =25C -20 A
Continuous Drain Current (Note 1) ID TA =70C -1.6 A
Power Dissipation (Note 1) PD TA =25C -7 W
Power Dissipation (Note 1) PD TA =70C -1.6 W
Continuous Source Current (Diode Conduction)(Note 1) IS t10S Steady State -2.9 A
Pulsed Drain Current (Note 2) IDM -95 A
Operating Junction and Storage Temperature Range TJ , TSTG -55 +150 C
Thermal Characteristics (Note 1)
Maximum Junction-to-Ambient RJA Surface Mounted on 1 x 1 FR4 Board 45 95 C/W
Electrical Characteristics (Ta = 25C unless otherwise stated)
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA -1 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 10 uA
Zero Gate Voltage Drain Current IDSS VDS = -48 V, VGS = 0 V -1 uA
Zero Gate Voltage Drain Current IDSS VDS = -48 V, VGS = 0 V, TJ = 55C -10 uA
On-State Drain Current ID(on) VDS = -5 V, VGS = -10 V -7.5 A
Drain-Source On-Resistance rDS(on) VDS = -30 V, VGS = -10 V, ID = -4 A 2.9 m
Drain-Source On-Resistance rDS(on) VDS = -30 V, VGS = -4.5 V, ID = -4 A 1.8 m
Forward Transconductance gfs VDS = -15 V, ID = -4 A 9 S
Diode Forward Voltage VSD IS = -2.1 A, VGS = 0 V -0.83 V
Dynamic Characteristics (b. Guaranteed by design, not subject to production testing.)
Total Gate Charge Qg VDS = -30 V, RL = 7.5 , ID = -4 A, VGEN = -10 V, RGEN = 6 10 nC
Gate-Source Charge Qgs 4.2 nC
Gate-Drain Charge Qgd 3.1 nC
Turn-On Delay Time td(on) 7 ns
Rise Time tr 5 ns
Turn-Off Delay Time td(off) 37 ns
Fall Time tf 14 ns
Input Capacitance Ciss VDS = -15 V, VGS = 0 V, f = 1 Mhz 1146 pF
Output Capacitance Coss 84 pF
Reverse Transfer Capacitance Crss 60 pF
Ordering Information Device Marking Shipping
LP4565T1G 4000/Tape&Reel
LP4565DT1AG
Outline and Dimensions
Dimension Symbol MIN NOM MAX Unit
A 1.75 mm
A1 0.10 0.15 0.20 mm
A2 1.35 1.45 1.55 mm
b 0.33 0.42 0.51 mm
c 0.15 0.22 0.29 mm
D 4.77 4.90 5.03 mm
E 5.80 6.00 6.20 mm
E1 3.80 3.90 4.00 mm
e 1.27BSC mm
L 0.46 0.66 0.86 mm
L1 0.85 1.05 1.25 mm
0 5 8
B 0.55
H 0 0.05 0.10 mm
Soldering Footprint SOP8
Dimension (mm) X Y C1 C2
0.60 1.55 5.40 1.27

2111031830_LRC-LP4565T1G_C2912044.pdf
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