N CHANNEL Super Junction MOSFET MCC MSJAC11N65Y TP with Low Figure of Merit and Halogen Free Option
Key Attributes
Model Number:
MSJAC11N65Y-TP
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
340mΩ@10V,5.5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5.5pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
901pF@50V
Pd - Power Dissipation:
78W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
MSJAC11N65Y-TP
Package:
DFN-8(5.7x5.1)
Product Description
Product Overview
The MSJAC11N65Y is an N-CHANNEL Super-Junction Power MOSFET designed for high-efficiency power applications. It features a very low FOM (RDS(on) Qg) and meets UL 94 V-0 flammability rating. This MOSFET is Moisture Sensitivity Level 1 and is Halogen Free available upon request. It is also Lead Free Finish/RoHS Compliant.
Product Attributes
- Brand: MCC (Micro Commercial Components)
- Model: MSJAC11N65Y
- Type: N-CHANNEL Super-Junction Power MOSFET
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Halogen Free: Available Upon Request (Suffix "-HF")
- Lead Free Finish/RoHS Compliant: Yes (Suffix "P" designates RoHS Compliant)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current | ID | TC=25C | 11 | A | ||
| Pulsed Drain Current | IDM | (Note 1) | 33 | A | ||
| Repetitive Avalanche Energy | EAS | (Note 1) | 211 | mJ | ||
| Avalanche Current | IAR | (Note 1) | 78 | A | ||
| Single Pulse Avalanche Energy | EAR | (Note 2) | 0.32 | mJ | ||
| Total Power Dissipation | PD | TC=25C | 1.6 | W | ||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance Junction to Ambient | 62 | C/W | ||||
| Thermal Resistance Junction to Case | 1.6 | C/W | ||||
| Electrical Characteristics @ 25C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 650 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=650V, VGS=0V | 1 | A | ||
| VDS=650V, VGS=0V, TJ=150C | 100 | A | ||||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =30V | 100 | nA | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.5 | 4 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=5.5A (Note 3) | 0.34 | 0.38 | ||
| Forward tranconductance | gFS | VDS=10V, ID=5.5A (Note 3) | 7.8 | S | ||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHz (Note 4) | 901 | pF | ||
| Output Capacitance | Coss | VDS=50V,VGS=0V,f=1MHz (Note 4) | 50 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=50V,VGS=0V,f=1MHz (Note 4) | 5.5 | pF | ||
| Total Gate Charge | Qg | VDD =400V, ID=11A,RG=25 (Note 4) | 21 | nC | ||
| Gate-Source Charge | Qgs | VDD =400V, ID=11A,RG=25 (Note 4) | 4.5 | nC | ||
| Gate-Drain Charge | Qgd | VDD =400V, ID=11A,RG=25 (Note 4) | 7 | nC | ||
| Turn-On Delay Time | td(on) | VDD=520V,VGS=10V,ID=11A (Note 4) | 41 | ns | ||
| Turn-On Rise Time | tr | VDD=520V,VGS=10V,ID=11A (Note 4) | 20 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=520V,VGS=10V,ID=11A (Note 4) | 123 | ns | ||
| Turn-Off Fall Time | tf | VDD=520V,VGS=10V,ID=11A (Note 4) | 6.4 | ns | ||
| Continuous Body Diode Current | IS | 9.2 | A | |||
| Pulsed Diode Forward Current | ISM | 29 | A | |||
| Body Diode Voltage | VSD | ISD=11A, VGS=0V | 0.9 | 1.2 | V | |
| Reverse Recovery Time | trr | VR=520V, IF=IS,diF/dt=100A/s (Note 4) | 280 | ns | ||
| Reverse Recovery Charge | Qrr | VR=520V, IF=IS,diF/dt=100A/s (Note 4) | 2.8 | C | ||
| Peak Reverse Recovery Current | Irrm | VR=520V, IF=IS,diF/dt=100A/s (Note 4) | 17 | A | ||
| Dimensions | ||||||
| DIM | INCHES | MM | NOTE | MIN | MAX | |
| A | 0.031 | 0.80 | 0.047 | 1.20 | ||
| B | 0.193 | 4.90 | 0.222 | 5.64 | ||
| C | 0.232 | 5.90 | 0.250 | 6.35 | ||
| D | 0.148 | 3.75 | 0.167 | 4.25 | ||
| E | 0.126 | 3.20 | 0.154 | 3.92 | ||
| F | 0.189 | 4.80 | 0.213 | 5.40 | ||
| G | 0.222 | 5.65 | 0.239 | 6.06 | ||
| H | 0.045 | 1.15 | 0.059 | 1.50 | ||
| K | 0.012 | 0.30 | 0.020 | 0.50 | ||
| J | 0.046 | 1.17 | 0.054 | 1.37 | ||
| L | 0.012 | 0.30 | 0.028 | 0.71 | ||
| M | 0.016 | 0.40 | 0.028 | 0.71 | ||
| N | 0.010 | 0.254 | TYP. | |||
Notes:
1. Repetitive Rating, Pulse Width Limited by Maximum Junction Temperature.
2. IAS=1.6A, VDD=50V, RG=25, Starting TJ=25C.
3. Pulse Test: Pulse Width300s, Duty Cycle 1%.
4. Guaranteed by Design, Not Subject to Production Testing.
2410010230_MCC-MSJAC11N65Y-TP_C725266.pdf
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