industrial IGBT module luxin-semi LGM200HF120S4F1A with low switching losses and thermal management
Key Attributes
Model Number:
LGM200HF120S4F1A
Product Custom Attributes
Pd - Power Dissipation:
1.071kW
Td(off):
350ns
Td(on):
160ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
1.29nF
Input Capacitance(Cies):
35.16nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@3mA
Operating Temperature:
-40℃~+150℃
Gate Charge(Qg):
0.9uC@15V,15V
Pulsed Current- Forward(Ifm):
400A
Switching Energy(Eoff):
10.8mJ
Turn-On Energy (Eon):
10.7mJ
Mfr. Part #:
LGM200HF120S4F1A
Package:
Screw Terminals
Product Description
Product Overview
The LGM200HF120S4F1A is a high-performance IGBT module designed for demanding applications. It features a low VCEsat with a positive temperature coefficient, low switching losses, and a low inductance case. The module utilizes an isolated copper baseplate with DBC technology for enhanced thermal management. It is ideal for use in welding machines, UPS systems, and other industrial applications.
Product Attributes
- Brand: LU-Semi
- Model: LGM200HF120S4F1A
- Technology: IGBT, Inverter
- Package: Isolated copper baseplate using DBC technology
Technical Specifications
| Parameter | Conditions | Symbol | Values | Units | |
| IGBT, Inverter Maximum Rated Values | Collector-emitter voltage | VCES | 1200 | V | |
| Continuous DC collector current | Tc = 95C, Tvj max = 175C | IC | 200 | A | |
| Repetitive peak collector current | tP = 1 ms | ICRM | 400 | A | |
| IGBT, Inverter Characteristic Values | Collector-emitter saturation voltage | IC = 200A, VGE = 15 V, Tvj = 25C | VCEsat | 1.85 | V |
| Collector-emitter saturation voltage | IC = 200A, VGE = 15 V, Tvj = 125C | VCEsat | 2.10 | V | |
| Collector-emitter saturation voltage | IC = 200A, VGE = 15 V, Tvj = 150C | VCEsat | 2.25 | V | |
| Gate threshold voltage | IC = 3 mA, VCE = VGE, Tvj = 25C | VGEth | 5.1 | V | |
| Gate charge | VGE = -15 / 15 V | QG | 0.9 | C | |
| Internal gate resistor | Tvj = 25C | RGint | 2.1 | ||
| IGBT, Inverter Capacitance | Input capacitance | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | Cies | 35.16 | nF |
| Reverse transfer capacitance | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | Cres | 1.29 | nF | |
| Collector-emitter cut-off current | VCE = 1200 V, VGE = 0 V, Tvj = 25C | ICES | 1.0 | mA | |
| Gate-emitter leakage current | VCE = 0 V, VGE = 20 V, Tvj = 25C | IGES | 400 | nA | |
| IGBT, Inverter Switching Times | Turn-on delay time, inductive load | IC = 200A ,VCE = 600V, Tvj = 25C, VGE = 15V, Rg=5.1 | tdon | 0.16 | s |
| Rise time, inductive load | IC = 200A ,VCE = 600V, Tvj = 25C, VGE = 15V, Rg=5.1 | tr | 0.094 | s | |
| Turn-off delay time, inductive load | IC = 200A ,VCE = 600V, Tvj = 25C, VGE = 15V, Rg=5.1 | tdoff | 0.35 | s | |
| Fall time, inductive load | IC = 200A ,VCE = 600V, Tvj = 25C, VGE = 15V, Rg=5.1 | tf | 0.096 | s | |
| IGBT, Inverter Energy Losses | Turn-on energy loss per pulse | IC = 200A ,VCE = 600V, Tvj = 25C, VGE = 15V, Rg=5.1 | Eon | 10.7 | mJ |
| Turn-off energy loss per pulse | IC = 200A ,VCE = 600V, Tvj = 25C, VGE = 15V, Rg=5.1 | Eoff | 10.8 | mJ | |
| IGBT, Inverter Thermal Resistance | Thermal resistance, junction to case per IGBT | RthJC | 0.14 | K/W | |
| Thermal resistance, case to heatsink per IGBT | Paste=1 W/(mK) /grease=1 W/(mK) | RthCH | 0.035 | K/W | |
| Diode, Inverter Maximum Rated Values | Repetitive peak reverse voltage | Tvj = 25C | VRRM | 1200 | V |
| Diode, Inverter Maximum Rated Values | Continuous DC forward current | IF | 200 | A | |
| Diode, Inverter Maximum Rated Values | Repetitive peak forward current | tP = 1 ms | IFRM | 400 | A |
| Diode, Inverter Characteristic Values | Forward voltage | IF = 200 A, VGE = 0 V, Tvj = 25C | VF | 1.76 | V |
| Peak reverse recovery current | IF = 200 A, VR = 600 V, VGE = -15 V, Rg=5.1, Tvj = 25C | IRR | 50.7 | A | |
| Diode, Inverter Energy Losses | Recovered charge | IF = 200 A, VR = 600 V, VGE = -15 V, Rg=5.1, Tvj = 25C | QRR | 16.5 | C |
| Reverse recovery energy | IF = 200 A, VR = 600 V, VGE = -15 V, Rg=5.1, Tvj = 25C | Erec | 2.51 | mJ | |
| Diode, Inverter Thermal Resistance | Thermal resistance, junction to case per diode | RthJC | 0.21 | K/W | |
| Thermal resistance, case to heatsink per diode | lPaste = 1 W/(mK) / lgrease = 1 W/(mK) | RthCH | 0.06 | K/W | |
| Module Maximum Rated Values | Isolation test voltage RMS | f = 50 Hz, t = 1 min. | VISOL | 2.5 | kV |
| Creepage distance | terminal to heatsink | 29 | mm | ||
| Clearance | terminal to heatsink | 23 | mm | ||
| Stray inductance module and fixture | LsCE | 20 | nH | ||
| Module lead resistance, terminals - chip | TC = 25Cper switch | RCC'+EE | 0.7 | m | |
| Module Operating Conditions | Storage temperature | Tstg | -40 to 125 | C | |
| Module Operating Conditions | Mountig force per clamp | F | 3 to 6 | N | |
| Module Operating Conditions | Weight | G | 345 | g |
2411220306_luxin-semi-LGM200HF120S4F1A_C5455586.pdf
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