Industrial grade MOSFET MASPOWER MS35N120HGF4 with 900W power dissipation and wide temperature range
Key Attributes
Model Number:
MS35N120HGF4
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
35A
RDS(on):
462mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 N-channel
Output Capacitance(Coss):
1.153nF
Input Capacitance(Ciss):
23nF
Pd - Power Dissipation:
900W
Gate Charge(Qg):
360nC@10V
Mfr. Part #:
MS35N120HGF4
Package:
SOT-227
Product Description
Product Overview
The MS35N120HGF4 is a high-performance N-Channel MOSFET from Maspower, featuring low RDS(on) and high current handling capability. It incorporates a fast intrinsic diode and is avalanche rated, making it suitable for demanding power applications. Its design prioritizes efficiency and reliability in high-voltage switching and pulse power circuits.
Product Attributes
- Brand: Maspower
- Model: MS35N120HGF4 H1.02
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Type | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 1200 | V | |||
| Drain Current - continuous | ID | 35 | A | |||
| Drain Current - pulse* | IDM | 100 | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy | EAS | 2 | J | |||
| Power Dissipation | PD | 900 | W | |||
| Operating and Storage Temperature Range | Tj,TSTG | -55 | +150 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
| Electrical Characteristics (TCASE=25 unless otherwise specified) | ||||||
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=3mA,VGS=0V | 1200 | - | - | V |
| Drain cut-off current | IDSS | VDS=1200,VGS=0V | - | - | 50 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V,VGS=30V | - | - | 300 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V,VGS=-30V | - | - | -300 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2.5 | 3.7 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=25A (note1) | - | 462 | - | m |
| Forward transconductance | Gfs | VDS=20V,ID=15A (note1) | - | 25 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 23 | - | nF |
| Output capacitance | Coss | - | 1153 | - | pF | |
| Reverse transfer capacitance | Crss | - | 75 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=600V,ID=15A Rg=1 | - | 72 | - | ns |
| Turn-On rise time | tr | - | 60 | - | ns | |
| Turn-Off delay time | Td(off) | - | 86 | - | ns | |
| Turn-Off Fall time | tf | - | 60 | - | ns | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDD=600V,ID=15A VGS=10V | - | 360 | - | nC |
| Gate-Source charge | Qgs | - | 135 | - | nC | |
| Gate-Drain charge | Qgd | - | 153 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=30A, (note1) | - | 0.82 | 1.2 | V |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | 35 | - | A | |
| Reverse recovery time | trr | IF=20A dIF/dt=-100A/us VR=100V | - | 300 | - | ns |
| Reverse recovery charge | Qrr | - | 2 | - | uC | |
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.138 | /W | |||
Notes: 1. Pulse test, t 300s, duty cycle, d 2%.
2411271634_MASPOWER-MS35N120HGF4_C7424083.pdf
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