Power MOSFET MS15N100HGC0 featuring 1000V VDS and 15A continuous drain current for electronic devices
Key Attributes
Model Number:
MS15N100HGC0
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
900mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
191pF
Pd - Power Dissipation:
400W
Input Capacitance(Ciss):
1.846nF
Gate Charge(Qg):
44nC@10V
Mfr. Part #:
MS15N100HGC0
Package:
TO-247
Product Description
Product Overview
The MS15N100HGC0/T1 H1.05 Maspower is a high-efficiency power semiconductor designed for demanding switching applications. It features a high breakdown voltage (VDS=1000V) and a continuous drain current of 15A. Key advantages include low Crss, low gate charge, and improved dv/dt capability, making it ideal for high-efficiency switch mode power supplies and electronic lamp ballasts based on half-bridge configurations, as well as UPS systems.
Product Attributes
- Brand: Maspower
- Model: MS15N100HGC0/T1 H1.05
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | TO-247 | TO-220F |
| Absolute Ratings | ||||||||
| Drain-Source Voltage | VDSS | 1000 | V | |||||
| Gate-Source Voltage | VGSS | ±30 | V | |||||
| Drain Current-continuous (TC=25) | ID | 15 | A | |||||
| Drain Current-continuous (TC=100) | ID | 10 | A | |||||
| Drain Current-pulse (note1) | IDM | 26 | A | |||||
| Single Pulsed Avalanche Energy (Tj=25,IAR=4A,VDD=50V)(note2) | EAS | 188 | mJ | |||||
| Maximum Power Dissipation | PD | 400 | W | ✔ | ||||
| Maximum Power Dissipation | PD | 3.2 | W/ | ✔ | ||||
| Maximum Power Dissipation | PD | 67.9 | W | ✔ | ||||
| Maximum Power Dissipation | PD | 0.54 | W/ | ✔ | ||||
| Peak Diode Recovery voltage slope(2) | dv/dt | 0.75 | V/ns | |||||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +175 | |||||
| Electrical Characteristics | ||||||||
| Drain-Source Voltage | BVDSS | ID=250A,VGS=0V | 1000 | - | - | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS,VGS=0V, Tc=25 | - | - | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS,VGS=0V, Tc=125 | - | - | 10 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=±30V,VDS=0V | - | - | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 3.0 | - | 5.0 | V | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=7.5A | - | 0.90 | 1.10 | Ω | ||
| Forward Transconductance | gfs | VDS=40V,ID=4A (note3) | - | 13 | - | S | ||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 1846 | - | pF | ||
| Output capacitance | Coss | - | 191 | - | pF | |||
| Reverse transfer capacitance | Crss | - | 10 | - | pF | |||
| Turn-On delay time | td(on) | VDS=750V,ID=4A, VGS=10V,RG=25Ω (note3,4) | - | 26 | - | ns | ||
| Turn-On rise time | tr | - | 35 | - | ns | |||
| Turn-Off delay time | td(Off) | - | 142 | - | ns | |||
| Turn-Off rise time | tf | - | 53 | - | ns | |||
| Total Gate Charge | Qg | VDS=750V,ID=4A, VGS=10V (note 3,4) | - | 44 | - | nC | ||
| Gate-Source charge | Qgs | - | 10 | - | nC | |||
| Gate-Drain charge | Qg d | - | 15 | - | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||||
| Maximum Continuous Drain-Source Diode Forward Curret | VSD | VGS=0V,IS=15A | - | - | 1.2 | V | ||
| Diode Forward Current | IS | - | - | 15 | A | |||
| Reverse recovery time | Trr | IS=4A,dI/dT=100A/μS VR=100V,VGS=0V, Tj=150℃(note4) | - | 470 | - | nS | ||
| Reverse recovery charge | Qrr | - | 3.4 | - | μC | |||
| Thermal Characteristic | ||||||||
| Thermal Resistance,junction to Case | Rth(j-C) | 0.4 | 1.84 | ℃/W | ✔ | ✔ | ||
| Thermal Resistance,junction to Ambient | Rth(j-A) | 36 | 62.5 | ℃/W | ✔ | ✔ | ||
| Order Information | ||||||||
| Order codes | Package | Packaging | MS15N100HGC0 | MS15N100HGT1 | ||||
| TO-247 | T0-220F | |||||||
| Tube | Tube | |||||||
2411271633_MASPOWER-MS15N100HGC0_C5353714.pdf
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