Luxin Semi YGW10N120T3 1200V 10A IGBT featuring tight parameter distribution and rugged construction
Key Attributes
Model Number:
YGW10N120T3
Product Custom Attributes
Pd - Power Dissipation:
260W
Td(off):
55ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
25pF
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@250uA
Operating Temperature:
-40℃~+150℃
Gate Charge(Qg):
75nC@15V
Reverse Recovery Time(trr):
270ns
Switching Energy(Eoff):
500uJ
Turn-On Energy (Eon):
1.25mJ
Input Capacitance(Cies):
1.72nF
Output Capacitance(Coes):
45pF
Mfr. Part #:
YGW10N120T3
Package:
TO-247
Product Description
Product Overview
The YGW10N120T3 is a 1200V / 10A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology for tight parameter distribution, high ruggedness, and stable temperature behavior. This IGBT offers a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to its positive temperature coefficient in VCE(SAT). It also boasts enhanced avalanche capability.
Product Attributes
- Brand: LU-Semi
- Product Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| IGBT Electrical Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250A | 1200 | - | - | V |
| Gate threshold voltage | VGE(th) | VGE=VCE, IC=250A | 5.2 | 6 | 6.8 | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=10A, Tj = 25C | - | 1.60 | - | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=10A, Tj = 150C | - | 2.0 | 2.0 | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tj = 25C | - | - | 100 | A |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tj = 150C | - | - | 1000 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 10A | - | 10 | - | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 1720 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 45 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 25 | - | pF |
| Gate charge | QG | VCC = 960V, IC = 10A, VGE = 15V | - | 75 | - | nC |
| IGBT Switching Characteristics (Inductive Load) | ||||||
| Turn-on delay Time | td(on) | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C | - | 25 | - | ns |
| Rise Time | tr | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C | - | 15 | - | ns |
| Turn-off delay time | td(off) | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C | - | 55 | - | ns |
| Fall time | tf | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C | - | 240 | - | ns |
| Turn-on Energy | Eon | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C | - | 1.25 | - | mJ |
| Turn-off energy | Eoff | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C | - | 0.5 | - | mJ |
| DIODE Electrical Characteristics | ||||||
| Diode Forward Voltage | VFM | IF = 10A, Tj = 25C | - | 2.3 | - | V |
| Reverse Recovery Time | Trr | IF= 15A, di/dt= 600A/s, Tj = 25C | - | 270 | - | ns |
| Reverse Recovery Current | Irr | IF= 15A, di/dt= 600A/s, Tj = 25C | - | 10 | - | A |
| Reverse Recovery Charge | Qrr | IF= 15A, di/dt= 600A/s, Tj = 25C | - | 1800 | - | nC |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | - | - | - | 1200 | V |
| DC collector current, limited by Tjmax | IC | TC = 25C | - | - | 20 | A |
| DC collector current, limited by Tjmax | IC | TC = 100C | - | - | 10 | A |
| Diode Forward current, limited by Tjmax | IF | TC = 25C | - | - | 20 | A |
| Diode Forward current, limited by Tjmax | IF | TC = 100C | - | - | 10 | A |
| Continuous Gate-emitter voltage | VGE | - | - | - | 20 | V |
| Transient Gate-emitter voltage | VGE | - | - | - | 30 | V |
| Pulsed collector current, VGE= 15V, tp limited by Tjmax | ICM | - | - | - | 40 | A |
| Short Circuit Withstand Time, VGE= 15V, VCE 600V | Tsc | - | - | - | 10 | s |
| Power dissipation , Tj=25C | Ptot | - | - | - | 260 | W |
| Operating junction temperature | Tj | - | -40 | - | 150 | C |
| Storage temperature | Ts | - | -55 | - | 150 | C |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | - | - | - | - | 260 | C |
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | - | - | - | 0.69 | K/W |
| Diode thermal resistance, junction - case | R(j-c) | - | - | - | 1.5 | K/W |
| Thermal resistance, junction - ambient | R(j-a) | - | - | - | 40 | K/W |
2410121255_luxin-semi-YGW10N120T3_C4153670.pdf
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