30V P Channel MOSFET Load Switch DC DC Conversion Motor Drive Applications Featuring LRC LP8314DT1AG
Key Attributes
Model Number:
LP8314DT1AG
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
38mΩ@4.5V
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
151pF
Number:
1 P-Channel
Output Capacitance(Coss):
163pF
Input Capacitance(Ciss):
1.539nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
19nC@4.5V
Mfr. Part #:
LP8314DT1AG
Package:
DFN3030-8B
Product Description
Product Overview
The LP8314DT1AG is a 30V P-Channel (D-S) MOSFET designed for load switches, DC/DC conversion, and motor drive applications. It features low RDS(ON) achieved through trench technology, resulting in low thermal impedance and fast switching speeds. This device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications requiring unique site and control change requirements. The product complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101
- PPAP Capable: Yes
- Product Type: P-Channel (D-S) MOSFET
- Application Specific Prefix: S- prefix for automotive and other applications
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -12 | A | Note 1 | ||
| Pulsed Drain Current | IDM | -40 | A | Note 2 | ||
| Maximum Power Dissipation | PD | 3.1 | W | Note 1 (TA = 25) | ||
| Maximum Power Dissipation | PD | 1.5 | W | Note 1 (TA = 70) | ||
| Operating Junction and Storage Temperature Range | TJ , Tstg | -50 | +150 | |||
| Maximum Junction-to-Ambient Thermal Resistance | RJA | 40 | C/W | Note 1 (t10S) | ||
| Maximum Junction-to-Ambient Thermal Resistance | RJA | 90 | C/W | Steady State | ||
| Continuous Source Current (Diode Conduction) | IS | -5 | A | Note 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | (VGS =0V, ID =-250A) | ||
| Gate Threshold Voltage | VGS(th) | -3 | V | (VDS =VGS , ID =-250A) | ||
| Gate Leakage Current | IGSS | 10 | A | (VDS =0V, VGS =20V) | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | (VDS =-24V, VGS =0V) | ||
| On-State Drain Current | ID(on) | -14 | A | (VDS = -5 V, VGS = -10 V), Note 3 | ||
| Drain-Source On-Resistance | RDS(ON) | 25 | m | (VGS =-10V, ID = -5A), Note 3 | ||
| Drain-Source On-Resistance | RDS(ON) | 38 | m | (VGS =-4.5V, ID = -5A), Note 3 | ||
| Diode Forward Voltage | VSD | -1.5 | V | (IS =-1A, VGS =0V), Note 3 | ||
| Forward Transconductance | gfs | 8 | S | (VDS = -15 V, ID = -7.3 A), Note 3 | ||
| Total Gate Charge | Qg | 163 | nC | (VDS = -15 V, RL =2.1 ,ID = -7.3 A,VGEN = -10 V,RGEN = 6 ), Note 4 | ||
| Gate-Source Charge | Qgs | 55 | nC | Note 4 | ||
| Gate-Drain Charge | Qgd | 21 | nC | Note 4 | ||
| Input Capacitance | Ciss | 1539 | pF | (VDS = -15 V, VGS = -4.5 V, ID = -7.3 A), Note 4 | ||
| Output Capacitance | Coss | 151 | pF | (VDS = -15 V, VGS = 0 V, f = 1 MHz), Note 4 | ||
| Reverse Transfer Capacitance | Crss | 19 | pF | Note 4 | ||
| Turn-On Delay Time | td(on) | 4.7 | ns | Note 4 | ||
| Turn-On Rise Time | tr | ns | Note 4 | |||
| Turn-Off Delay Time | td(off) | ns | Note 4 | |||
| Turn-Off Fall Time | tf | ns | Note 4 | |||
| Device Marking | P8 | |||||
| Order Information | LP8314DT1AG | 3000/Tape&Reel | ||||
| Package Type | DFN3030-8B | |||||
| Dimensions (mm) | 3.00 x 3.00 |
2111041830_LRC-LP8314DT1AG_C2912045.pdf
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