Dual N Channel Power Field Effect Transistor MATSUKI ME4972 G Suitable for Low Voltage Applications
Key Attributes
Model Number:
ME4972-G
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
1.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
376mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
2 N-Channel
Input Capacitance(Ciss):
657pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
16.1nC@10V
Mfr. Part #:
ME4972-G
Package:
SOP-8
Product Description
Product Overview
The ME4972-G is a Dual N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its design prioritizes low in-line power loss within a very small outline surface mount package.
Product Attributes
- Brand: Not explicitly stated, but associated with ME4972-G
- Origin: Not explicitly stated
- Material: Not explicitly stated
- Color: Green product (implied by 'Green product-Halogen free')
- Certifications: Halogen free
Technical Specifications
| Parameter | Symbol | Maximum Ratings (Unit) | Electrical Characteristics (Unit) | Typical Characteristics (Unit) |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 V | BVDSS: 150 V (VGS=0V, ID=250A) | |
| Gate-Source Voltage | VGS | 20 V | ||
| Continuous Drain Current | ID | 1.9 A (TA=25), 1.5 A (TA=70) | ||
| Pulsed Drain Current | IDM | 7 A | ||
| Maximum Power Dissipation | PD | 2 W (TA=25), 1.3 W (TA=70) | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Case | RJA | 62.5 /W | ||
| Gate Threshold Voltage | VGS(th) | 1 - 3 V (VDS=VGS, ID=250A) | ||
| Gate Leakage Current | IGSS | 100 nA (VDS=0V, VGS=20V) | ||
| Zero Gate Voltage Drain Current | IDSS | 1 A (VDS=120V, VGS=0V) | ||
| Drain-Source On-Resistance | RDS(ON) | 313 - 376 m (VGS=10V, ID=7A), 300 - 360 m (VGS=4.5V, ID=6A) | ||
| Diode Forward Voltage | VSD | 1.3 V (IS=1.8A, VGS=0V) | ||
| Total Gate Charge | Qg | 16.1 nC (VDS=75V, VGS=10V, ID=7A) | ||
| Gate-Source Charge | Qgs | 5.2 nC | ||
| Gate-Drain Charge | Qgd | 4.2 nC | ||
| Input Capacitance | Ciss | 657 pF (VDS=25V, VGS=0V,f=1MHz) | ||
| Output Capacitance | Coss | 34 pF | ||
| Reverse Transfer Capacitance | Crss | 7 pF | ||
| Turn-On Delay Time | td(on) | 9.8 ns (VDS=75V, RL =10.68, VGS=10V, RG=6, ID=7A) | ||
| Turn-On Rise Time | tr | 11.1 ns | ||
| Turn-Off Delay Time | td(off) | 29.3 ns | ||
| Turn-Off Fall Time | tf | 24.4 ns |
2410121449_MATSUKI-ME4972-G_C2841375.pdf
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