Switching amplifier NPN transistor MDD Microdiode Semiconductor MMBTA06 with SOT-23 package features
Key Attributes
Model Number:
MMBTA06
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
MMBTA06
Package:
SOT-23
Product Description
Product Overview
The MMBTA06 is an NPN transistor in a SOT-23 package, designed for switching and amplifier applications. It offers complementary PNP type with MMBTA56.
Product Attributes
- Brand: microdiode.com
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=0.1mA, IE=0 | 80 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 80 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=0.1mA, IC=0 | 4 | V | ||
| Collector cut-off current | ICBO | VCB=80V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICES | VCE=60V, IB=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=3V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC=10mA | 100 | 400 | ||
| DC current gain | hFE(2) | VCE=1V, IC=100mA | 100 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB=10mA | 0.25 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB=10mA | 1.2 | V | ||
| Transition frequency | fT | VCE=2V,IC=10mA, f=100MHz | 100 | MHz |
2509180925_MDD-Microdiode-Semiconductor-MMBTA06_C5254319.pdf
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