High cell density power transistor MATSUKI ME4548-G optimized for loss in surface mount compact package
Key Attributes
Model Number:
ME4548-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@4.5V,5.6A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
148pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
209pF
Input Capacitance(Ciss):
1.49nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
ME4548-G
Package:
SOP-8
Product Description
Product Overview
The ME4548 is an N+P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low power loss in a compact surface-mount package.
Product Attributes
- Brand: ME (Matsuki Electric/Force Mos)
- Product Variants: ME4548 (Pb-free), ME4548-G (Green product-Halogen free)
- Package Type: SOP-8
- Certifications: Pb-free, Halogen free
Technical Specifications
| Parameter | Symbol | N-Channel | P-Channel | Unit | Conditions |
| Drain-Source Voltage | VDS | 30 | -30 | V | VGS=0V, ID=250A (N-Ch) / -250A (P-Ch) |
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.5 | -1.0 - -2.5 | V | VDS=VGS, ID=250A (N-Ch) / -250A (P-Ch) |
| Gate Leakage Current | IGSS | 100 | nA | VDS=0V, VGS=20V | |
| Zero Gate Voltage Drain Current | IDSS | 1 (N-Ch) / -1 (P-Ch) | A | VDS=24V (N-Ch) / -24V (P-Ch), VGS=0V | |
| Drain-Source on-State Resistance | RDS(ON) | 20 | 25 | m | VGS=10V, ID=8.1A (N-Ch) / VGS=-10V, ID=-7.1A (P-Ch) |
| 28 | 40 | VGS=4.5V, ID=6A (N-Ch) / VGS=-4.5V, ID=-5.6A (P-Ch) | |||
| Diode Forward Voltage | VSD | 0.75 - 1 | -0.7 - -1 | V | IS=1A (N-Ch) / -1A (P-Ch), VGS=0V |
| Total Gate Charge | Qg | 19 | 38 | nC | VDS=15V,VGS=10V,ID=10A (N-Ch) / VDS=-15V,VGS=-10V,ID=-9.1A (P-Ch) |
| Gate-Source Charge | Qgs | 4.5 | 7.7 | nC | |
| Gate-Drain Charge | Qgd | 3 | 9 | nC | |
| Input Capacitance | Ciss | 720 | 1490 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 85 | 209 | pF | |
| Reverse Transfer Capacitance | Crss | 23 | 148 | pF | |
| Turn-On Delay Time | td(on) | 12 | 38.2 | ns | VDD=25V, RL =25 ID=1A, VGEN=10V, RG=6 (N-Ch) / VDD=-15V, RL =15 ID=-1A, VGEN=-10V, RG=6 (P-Ch) |
| Turn-On Rise Time | tr | 7 | 16.7 | ns | |
| Turn-Off Delay Time | td(off) | 44 | 106 | ns | |
| Turn-Off Fall Time | tf | 4 | 24.1 | ns | |
| Maximum Power Dissipation | PD | 2 | W | TA=25 | |
| 1.28 | TA=70 | ||||
| Continuous Drain Current | ID | 8.1 | -7.1 | A | TA=25 |
| 6.5 | -5.6 | TA=70 | |||
| Pulsed Drain Current | IDM | 30 | A | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||
| Thermal Resistance-Junction to Ambient | RJA | 62.5 | /W | ||
2410121643_MATSUKI-ME4548-G_C2693569.pdf
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