Compact Surface Mount Power MOSFET ME80N08A with High Cell Density and Excellent DC Current Capability
Key Attributes
Model Number:
ME80N08A
Product Custom Attributes
Drain To Source Voltage:
-
Current - Continuous Drain(Id):
162A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
3.9mΩ@10V,80A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
375pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
12.5nF@25V
Pd - Power Dissipation:
210W
Gate Charge(Qg):
56nC@4.5V
Mfr. Part #:
ME80N08A
Package:
TO-220
Product Description
Product Overview
The ME80N08A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include an extremely low RDS(ON) due to its super high density cell design and exceptional DC current capability.
Product Attributes
- Brand: ME (Matsuki Electric/Force mos)
- Origin: DCC (Official Release)
- Material: Pb-free (ME80N08A), Green product-Halogen free (ME80N08A-G)
- Certifications: Pb-free, Green product-Halogen free
Technical Specifications
| Parameter | Symbol | ME80N08A/ME80N08A-G | Unit | Notes |
| Drain-Source Voltage | VDS | 80 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | 194 | A | Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A. |
| Continuous Drain Current (TC=70) | ID | 162 | A | Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A. |
| Pulsed Drain Current | IDM | 776 | A | pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing. |
| Power Dissipation (TC=25) | PD | 300 | W | The device mounted on 1in2 FR4 board with 2 oz copper. |
| Power Dissipation (TC=70) | PD | 210 | W | The device mounted on 1in2 FR4 board with 2 oz copper. |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | ||
| Thermal Resistance-Junction to Case | RJC | 0.5 | /W | The device mounted on 1in2 FR4 board with 2 oz copper. |
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | BVDSS | 80 | V | |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 2.0 to 4.0 | V | |
| Gate-Body Leakage (VGS=20V) | IGSS | 100 | nA | |
| Zero Gate Voltage Drain Current (VDS=80V, VGS=0V) | IDSS | 1 | A | |
| Drain-Source On-Resistance (VGS=10V, ID=80A) | RDS(ON) | 3.9 to 5 | m | RDS(ON)5m@VGS=10V |
| Diode Forward Voltage (IS=40A, VGS=0V) | VSD | 0.8 to 1.2 | V | |
| Total Gate Charge (VDD=40V, VGS=10V, ID=80A) | Qg | 221 | nC | |
| Total Gate Charge (VDD=40V, VGS=4.5V, ID=80A) | Qg | 56 | nC | |
| Gate-Source Charge | Qgs | 63 | nC | |
| Gate-Drain Charge | Qgd | 55 | nC | |
| Input Capacitance (VDS=25V, VGS=0V, f=1MHz) | Ciss | 12500 | pF | |
| Output Capacitance (VDS=25V, VGS=0V, f=1MHz) | Coss | 1150 | pF | |
| Reverse Transfer Capacitance (VDS=25V, VGS=0V, f=1MHz) | Crss | 375 | pF | |
| Turn-On Delay Time (VDD=40V, VGS =10V, RL=20, RG=3.3) | td(on) | 65 | ns | |
| Turn-On Rise Time (VDD=40V, VGS =10V, RL=20, RG=3.3) | tr | 43 | ns | |
| Turn-Off Delay Time (VDD=40V, VGS =10V, RL=20, RG=3.3) | td(off) | 196 | ns | |
| Turn-Off Fall Time (VDD=40V, VGS =10V, RL=20, RG=3.3) | tf | 53 | ns |
2410121457_MATSUKI-ME80N08A_C709731.pdf
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