MDD Microdiode Semiconductor MDDG04R01L 40V N Channel MOSFET with High Current Capacity and Low RDSon
Key Attributes
Model Number:
MDDG04R01L
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
320A
RDS(on):
0.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.65V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Output Capacitance(Coss):
3.55nF
Input Capacitance(Ciss):
7.3nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
MDDG04R01L
Package:
TOLL
Product Description
Product Overview
The MDDG04R01L is a 40V N-Channel Enhancement Mode MOSFET produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. It offers extremely low RDS(on) of 0.85 m at VGS = 10V, ID = 75A, and superior switching performance with a best-in-class soft body diode. This MOSFET is 100% UIS and dVDS tested.
Product Attributes
- Brand: MDD Semiconductor
- Origin: Shenzhen (implied by disclaimer)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | TA=25C (Note 1) | 1280 | A | ||
| Pulsed Drain Current | IDM | (Note 2) | 320 | A | ||
| Single Pulsed Avalanche Energy | EAS | (Note 3) | 576 | mJ | ||
| Power Dissipation | PD | TA=25C | 125 | W | ||
| Thermal Resistance (min. footprint) | RJA | 91 | C/W | |||
| Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Electrical Characteristics (TA=25C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | (BR)DSS | VGS=0V, ID=250A | 40 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VGS=0V, VDS=40V | 1 | A | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 1.1 | 2.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=75A | 0.6 | 0.85 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=30A | 0.92 | 1.2 | m | |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDD=10V, ID=100A, RG=5 | 19 | ns | ||
| Turn on Rise Time | tr | VDD=10V, ID=100A, RG=5 | 26 | ns | ||
| Turn Off Fall Time | tf | VDD=10V, ID=100A, RG=5 | 45 | ns | ||
| Turn Off Delay Time | td(off) | VDD=10V, ID=100A, RG=5 | 85 | ns | ||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=75A, VGS=0V | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=10A, di/dt=100A/s | 141 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=10A, di/dt=100A/s | 333 | nC | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=32V, VGS=0V, f=1MHz | 7300 | pF | ||
| Output Capacitance | Coss | VDS=32V, VGS=0V, f=1MHz | 3550 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=32V, VGS=0V, f=1MHz | 145 | pF | ||
| Gate Source Charge | Qgs | ID=150A, VGS=10V | 29 | nC | ||
| Gate Drain Charge | Qgd | ID=150A, VGS=10V | 43 | nC | ||
| Total Gate Charge | Qg | ID=150A, VGS=10V | 130 | nC | ||
2508071805_MDD-Microdiode-Semiconductor-MDDG04R01L_C50176502.pdf
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