High voltage MASPOWER MS30N90ICE0 power semiconductor with low RDSon and easy drive characteristics
Key Attributes
Model Number:
MS30N90ICE0
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
30A
RDS(on):
167mΩ@15V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
16pF
Input Capacitance(Ciss):
2.84nF
Pd - Power Dissipation:
240W
Output Capacitance(Coss):
220pF
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
MS30N90ICE0
Package:
TO-263
Product Description
Product Overview
The MS30N90ICE0/C0 is a high-performance power semiconductor from Maspower, designed for demanding applications. It features very low RDS(on) and Qg, ensuring efficient operation. The device is 100% avalanche tested and easy to drive, making it a practical choice for Uninterruptible Power Supply and Power Factor Correction systems. It is also RoHS compliant.
Product Attributes
- Brand: Maspower
- Certifications: RoHS compliant
Technical Specifications
| Model | Drain-Source Voltage (VDSS) | Continuous Drain Current (ID) @ 25C | Continuous Drain Current (ID) @ 100C | Pulsed Drain Current (IDM) | Gate-Source Voltage (VGSS) | Single Pulsed Avalanche Energy (EAS) | Repetitive Avalanche Energy (EAR) | Avalanche Current (IAR) | Power Dissipation (PD) @ 25C | Operating & Storage Temp (TJ, TSTG) | Drain-Source On-Resistance (RDS(ON)) @ VGS=15V, ID=20A | Total Gate Charge (Qg) @ VDS=720V, ID=30A, VGS=10V | Package |
| MS30N90ICE0/C0 | 900 V | 30 A | 22 A | 120 A | 30 V | 280 mJ | 0.5 mJ | 7.5 A | 240 W | -55~+150 | 167 - 222 m | 62 nC | TO-263 / TO-247 |
2411261924_MASPOWER-MS30N90ICE0_C7424095.pdf
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