PNP Silicon Transistor MCC MMSS8550-L-TP with Collector Base Voltage 40 Volts and 0625 Watts Power Dissipation
Key Attributes
Model Number:
MMSS8550-L-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
-
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMSS8550-L-TP
Package:
SOT-23
Product Description
Product Overview
The MMSS8550-L is a PNP Silicon Plastic-Encapsulated Transistor from Micro Commercial Components (MCC). It is designed for various electronic applications and offers capabilities such as 0.625 Watts of power dissipation at 25C, a collector current of 1.5A, and a collector-base voltage of 40V. The device operates within a junction temperature range of -55C to +150C and features a molded plastic case with UL Flammability Classification Rating 94-0 and MSL Rating 1. Halogen-free options are available.
Product Attributes
- Brand: Micro Commercial Components (MCC)
- Origin: Not specified
- Material: Molded Plastic
- Color: Not specified
- Certifications: UL Flammability Classificatio Rating 94-0, MSL Rating 1
- Halogen Free: Available upon request by adding suffix "-HF"
Technical Specifications
| Symbol | Parameter | Min | Max | Units | |
| OFF CHARACTERISTICS | |||||
| V(BR)CBO | Collector-Base Breakdown Voltage (IC=100Adc, IE=0) | 40 | --- | Vdc | |
| V(BR)CEO | Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB=0) | 25 | --- | Vdc | |
| V(BR)EBO | Emitter-Base Breakdown Voltage (IE=100Adc, IC=0) | 6.0 | --- | Vdc | |
| ICBO | Collector Cutoff Current (VCB=40Vdc, IE=0) | --- | 0.1 | Adc | |
| ICEO | Collector Cutoff Current (VCE=20Vdc, IB=0) | --- | 0.1 | Adc | |
| IEBO | Emitter Cutoff Current (VEB=5.0Vdc, IC=0) | --- | 0.1 | Adc | |
| ON CHARACTERISTICS | |||||
| hFE(1) | DC Current Gain (IC=100mAdc, VCE=1.0Vdc) | 120 | 350 | --- | |
| hFE(2) | DC Current Gain (IC=800mAdc, VCE=1.0Vdc) | 40 | --- | --- | |
| VCE(sat) | Collector-Emitter Saturation Voltage (IC=800mAdc, IB=80mAdc) | --- | 0.5 | Vdc | |
| VBE(sat) | Base-Emitter Saturation Voltage (IC=800mAdc, IB=80mAdc) | --- | 1.2 | Vdc | |
| VEB | Base- Emitter Voltage (IE=1.5Adc) | --- | 1.6 | Vdc | |
| SMALL-SIGNAL CHARACTERISTICS | |||||
| fT | Transistor Frequency (IC=50mAdc, VCE=10Vdc, f=30MHz) | 100 | --- | MHz | |
| CLASSIFICATION OF HFE (1) | |||||
| Rank | L | H | Range | --- | |
| 120-200 | 200-350 | --- | --- | ||
| SOT-23 Suggested Solder Pad Layout | |||||
| DIM | MIN | MAX | MIN | MAX | NOTE |
| A | .110 | .120 | 2.80 | 3.04 | |
| B | .083 | .104 | 2.10 | 2.64 | |
| C | .047 | .055 | 1.20 | 1.40 | |
| D | .035 | .041 | .89 | 1.03 | |
| E | .070 | .081 | 1.78 | 2.05 | |
| F | .018 | .024 | .45 | .60 | |
| G | .0005 | .0039 | .013 | .100 | |
| H | .035 | .044 | .89 | 1.12 | |
| J | .003 | .007 | .085 | .180 | |
| K | .015 | .020 | .37 | .51 | |
| Device Packing | |||||
| Part Number | Packing Type | Quantity | |||
| MMSS8550-L-TP | Tape&Reel | 3Kpcs/Reel | |||
2410121959_MCC-MMSS8550-L-TP_C188249.pdf
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