Low On Resistance N Channel MOSFET MATSUKI ME7170 Suitable for Compact Surface Mount Power Solutions
Key Attributes
Model Number:
ME7170
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
418pF
Number:
-
Output Capacitance(Coss):
487pF
Input Capacitance(Ciss):
5.406nF
Pd - Power Dissipation:
56W
Gate Charge(Qg):
86nC@10V
Mfr. Part #:
ME7170
Package:
DFN-8(5x6)
Product Description
Product Overview
The ME7170-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as notebook computer power management and other battery-powered circuits requiring low-side switching and low in-line power loss in a compact surface-mount package. Key features include extremely low RDS(ON) and high DC current capability.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Name: ME7170-G
- Type: N-Channel 30V(D-S) Enhancement MOSFET
- Package: PowerDFN 5x6
- Certifications: Green product-Halogen free
- Origin: (Not specified)
- Material: (Not specified)
- Color: (Not specified)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (TA=25) | ID | 110 | A | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Continuous Drain Current (TA=70) | ID | 90 | A | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Pulsed Drain Current | IDM | 450 | A | |
| Maximum Power Dissipation (TA=25) | PD | 56 | W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Maximum Power Dissipation (TA=70) | PD | 36 | W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Case | RJC | 2.2 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Static Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250A |
| Gate Threshold Voltage | VGS(th) | 1 - 2.2 | V | VDS=VGS, ID=250A |
| Gate Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V |
| Drain-Source On-State Resistance | RDS(ON) | 2.4 - 2.6 | mΩ | VGS=10V, ID=25A |
| Drain-Source On-State Resistance | RDS(ON) | 3.3 - 3.9 | mΩ | VGS=4.5V, ID=19A |
| Diode Forward Voltage | VSD | 0.8 - 1.2 | V | IS=25A, VGS=0V |
| Dynamic Electrical Characteristics | ||||
| Total Gate Charge | Qg | 86 | nC | VDS=15V, VGS=10V, ID=20A |
| Total Gate Charge | Qg | 39 | nC | VDS=15V, VGS=4.5V, ID=20A |
| Gate-Source Charge | Qgs | 19 | nC | |
| Gate-Drain Charge | Qgd | 12 | nC | |
| Input Capacitance | Ciss | 5406 | pF | VDS=15V, VGS=0V, F=1MHz |
| Output Capacitance | Coss | 487 | pF | VDS=15V, VGS=0V, F=1MHz |
| Reverse Transfer Capacitance | Crss | 418 | pF | VDS=15V, VGS=0V, F=1MHz |
| Turn-On Delay Time | td(on) | 27 | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A |
| Turn-On Rise Time | tr | 51 | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A |
| Turn-Off Delay Time | td(off) | 152 | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A |
| Turn-Off Fall Time | tf | 54 | ns | VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A |
2409291234_MATSUKI-ME7170_C2841360.pdf
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