Power Application Mosfet Megain M2M-0080-120K Silicon Carbide SiC N Channel Enhancement Mode Device

Key Attributes
Model Number: M2M-0080-120K
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
98mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17.9pF
Pd - Power Dissipation:
166W
Input Capacitance(Ciss):
2.016nF
Output Capacitance(Coss):
72.6pF
Gate Charge(Qg):
85nC
Mfr. Part #:
M2M-0080-120K
Package:
TO-247-4
Product Description

Product Overview

The M2M-0080-120K is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET designed for high-performance power applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its avalanche ruggedness contributes to system reliability. This MOSFET is halogen-free and RoHS compliant, leading to higher system efficiency, reduced cooling requirements, increased power density, and the ability to operate at increased system switching frequencies.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon Carbide (SiC)
  • Color: Not specified
  • Certifications: Halogen Free, RoHS Compliant

Technical Specifications

Part NumberPackageVDSmax (V)VGSmax (V)ID (A) @ TC=25CID (A) @ TC=100CPD (W) @ TC=25CRDS(on) (m) @ TC=25CRDS(on) (m) @ TC=150CV(BR)DSS (V)VGS(th) (V)IDSS (A)IGSS (nA)gfs (S) @ TJ=25Cgfs (S) @ TJ=150CCiss (pF)Coss (pF)Crss (pF)EON (J)EOFF (J)td(on) (ns)tr (ns)td(off) (ns)tf (ns)RG(int) ()Qgs (nC)Qgd (nC)Qg (nC)VSD (V) @ TJ=25CVSD (V) @ TJ=150CIS (A) @ TC=25Ctrr (ns)Qrr (nC)Irrm (A)RJC (/W)RJA (/W)
M2M-0080-120KTO-247-41200-10/+2528201668012012002.0-4.0120-2007.06.6201672.617.918070236017122.82326853.53.32818808.00.7535

2506251635_Megain-M2M-0080-120K_C49242768.pdf

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