Power Application Mosfet Megain M2M-0080-120K Silicon Carbide SiC N Channel Enhancement Mode Device
Product Overview
The M2M-0080-120K is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET designed for high-performance power applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its avalanche ruggedness contributes to system reliability. This MOSFET is halogen-free and RoHS compliant, leading to higher system efficiency, reduced cooling requirements, increased power density, and the ability to operate at increased system switching frequencies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Carbide (SiC)
- Color: Not specified
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Part Number | Package | VDSmax (V) | VGSmax (V) | ID (A) @ TC=25C | ID (A) @ TC=100C | PD (W) @ TC=25C | RDS(on) (m) @ TC=25C | RDS(on) (m) @ TC=150C | V(BR)DSS (V) | VGS(th) (V) | IDSS (A) | IGSS (nA) | gfs (S) @ TJ=25C | gfs (S) @ TJ=150C | Ciss (pF) | Coss (pF) | Crss (pF) | EON (J) | EOFF (J) | td(on) (ns) | tr (ns) | td(off) (ns) | tf (ns) | RG(int) () | Qgs (nC) | Qgd (nC) | Qg (nC) | VSD (V) @ TJ=25C | VSD (V) @ TJ=150C | IS (A) @ TC=25C | trr (ns) | Qrr (nC) | Irrm (A) | RJC (/W) | RJA (/W) |
| M2M-0080-120K | TO-247-4 | 1200 | -10/+25 | 28 | 20 | 166 | 80 | 120 | 1200 | 2.0-4.0 | 1 | 20-200 | 7.0 | 6.6 | 2016 | 72.6 | 17.9 | 180 | 70 | 23 | 60 | 17 | 12 | 2.8 | 23 | 26 | 85 | 3.5 | 3.3 | 28 | 18 | 80 | 8.0 | 0.75 | 35 |
2506251635_Megain-M2M-0080-120K_C49242768.pdf
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