Compact surface mount N Channel MOSFET MATSUKI ME7232S-G with high continuous drain current rating
Key Attributes
Model Number:
ME7232S-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
68.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
151pF
Number:
1 N-channel
Output Capacitance(Coss):
187pF
Input Capacitance(Ciss):
1.527nF
Pd - Power Dissipation:
37.8W
Gate Charge(Qg):
33.2nC@10V
Mfr. Part #:
ME7232S-G
Package:
DFN-8(3x3)
Product Description
Product Overview
The ME7232S-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits requiring low power loss in a very small outline surface mount package. Its key features include extremely low RDS(ON) through super high density cell design and exceptional on-resistance and maximum DC current capability.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Family: N-Channel 30V (D-S) MOSFET
- Model Numbers: ME7232S, ME7232S-G
- Certifications: Pb free (ME7232S), Green product-Halogen free (ME7232S-G)
- Package Type: DFN(S) 3X3
Technical Specifications
| Parameter | Symbol | ME7232S/ME7232S-G | Unit |
| Maximum Ratings | |||
| Drain-Source Voltage | VDS | 30 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current* (TA=25) | ID | 21.7 | A |
| 17.4 | A | ||
| Continuous Drain Current* (TC=25) | ID | 68.6 | A |
| 55 | A | ||
| Pulsed Drain Current | IDM | 206 | A |
| Maximum Power Dissipation* (TA=25) | PD | 3.79 | W |
| 2.42 | W | ||
| Maximum Power Dissipation* (TC=25) | PD | 37.8 | W |
| 24.2 | W | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |
| Junction-to-Ambient Thermal Resistance* | RJA | 33 | /W |
| Thermal Resistance-Junction to Case* | RJC | 3.3 | /W |
| Electrical Characteristics (TJ =25 Unless Otherwise Specified) | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | BVDSS | 30 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 1 ~ 2 | V |
| Gate Leakage Current (VDS=0V, VGS=±20V) | IGSS | ±100 | nA |
| Zero Gate Voltage Drain Current (VDS=30V, VGS=0V) | IDSS | 1 | µA |
| Drain-Source On-State Resistance (VGS=10V, ID=8A) | RDS(ON) | 3.9 ~ 5 | mΩ |
| Drain-Source On-State Resistance (VGS=4.5V, ID=5A) | RDS(ON) | 5.2 ~ 7 | mΩ |
| Diode Forward Voltage (IS=1A, VGS=0V) | VsD | 1 | V |
| Total Gate Charge (VDS=15V, VGS=10V, ID=6.5A) | Qg | 33.2 | nC |
| Gate-Source Charge | Qgs | 7.4 | nC |
| Gate-Drain Charge | Qgd | 7.1 | nC |
| Input Capacitance (VDS=15V, VGS=0V, f=1.0MHz) | Ciss | 1527 | pF |
| Output Capacitance | Coss | 187 | pF |
| Reverse Transfer Capacitance | Crss | 151 | pF |
| Turn-On Delay Time (VDS=15V, RL =2.3Ω, RGEN=3.3Ω, VGS=10V) | td(on) | 16.8 | ns |
| Turn-On Rise Time | tr | 50.8 | ns |
| Turn-Off Delay Time | td(off) | 41.8 | ns |
| Turn-Off Fall Time | tf | 15.7 | ns |
| Single pulse Avalanche Energy (L=0.1mH, IAS=29A) | EAS | 42 | mJ |
2410121518_MATSUKI-ME7232S-G_C2841368.pdf
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