Power field effect transistor MATSUKI ME2307 P Channel type designed for operation in portable devices
Key Attributes
Model Number:
ME2307
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V,3.2A
Gate Threshold Voltage (Vgs(th)):
-
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
540pF
Output Capacitance(Coss):
-
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
ME2307
Package:
SOT-23
Product Description
Product Overview
The ME2307 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Certifications: Pb-free (ME2307), Green product-Halogen free (ME2307-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) | ||||
| Drain-Source Voltage | VDS | -30 | V | * The device mounted on 1in2 FR4 board with 2 oz copper |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | -3.5 (TA=25) / -2.8 (TA=70) | A | |
| Pulsed Drain Current | IDM | -14 | A | |
| Maximum Power Dissipation | PD | 1.4 (TA=25) / 0.9 (TA=70) | W | |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient | RJA | 90 | /W | * |
| STATIC | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250µA |
| Gate Threshold Voltage | VGS(th) | -1 to -3 | V | VDS=VGS, ID=-250µA |
| Gate Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 58 to 70 (VGS=-10V, ID=-3.2A) / 75 to 95 (VGS=-4.5V, ID=-2.5A) | mΩ | a. Pulse test: pulse width≤300µs, duty cycle≤2% |
| Diode Forward Voltage | VSD | -0.8 to -1.2 | V | IS=-1A, VGS=0V |
| DYNAMIC | ||||
| Total Gate Charge | Qg | 14 to 18 (VDS=-15V,VGS=-10V,ID=-1.7A) / 6.8 (VDS=-15V, VGS=-4.5V, ID=-1.7A) | nC | |
| Gate-Source Charge | Qgs | 2.8 | ||
| Gate-Drain Charge | Qgd | 2.3 | ||
| Gate resistance | Rg | 3.5 to 4.5 | Ω | VDS=0V, VGS=0V, f=1MHz |
| Input Capacitance | Ciss | 460 to 540 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 74 | ||
| Reverse Transfer Capacitance | Crss | 23 | ||
| Turn-On Delay Time | td(on) | 33 to 43 | ns | VDS=-15V, RL =15Ω, RGEN=6Ω, VGS=-10V |
| Turn-On Rise Time | tr | 17 to 22 | ns | |
| Turn-Off Delay Time | td(off) | 39 to 52 | ns | |
| Turn-Off Fall time | tf | 5 to 6.5 | ns | |
2409291234_MATSUKI-ME2307_C165221.pdf
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