Power MOSFET Device MATSUKI ME4435 P Channel Logic Enhancement Mode for Battery Powered Applications
Key Attributes
Model Number:
ME4435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V,6.9A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
148pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.49nF
Output Capacitance(Coss):
209pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
ME4435
Package:
SOP-8
Product Description
Product Overview
The ME4435 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface mount package.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Variants: ME4435 (Pb-free), ME4435-G (Green product-Halogen free)
- Certifications: Pb-free, Halogen free
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (TA=25) | ID | -8.8 | A | |
| Continuous Drain Current (TA=70) | ID | -7.1 | A | |
| Pulsed Drain Current | IDM | -35 | A | a |
| Maximum Power Dissipation (TA=25) | PD | 2.5 | W | |
| Maximum Power Dissipation (TA=70) | PD | 1.6 | W | |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient* | RJA | 50 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Static Electrical Characteristics | ||||
| Gate Threshold Voltage | VGS(th) | -1.4 | V | VDS=VGS, ID=-250μA; Min: -1, Max: -3 |
| Gate Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V, VGS=0V |
| On-State Drain Current | ID(ON) | -30 | A | a; VDS=-5V, VGS=-10V |
| Drain-Source On-State Resistance | RDS(ON) | 20 | mΩ | a; VGS=-10V, ID=-9.1A; Max |
| Drain-Source On-State Resistance | RDS(ON) | 35 | mΩ | a; VGS=-4.5V, ID=-6.9A; Max |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-2.1A, VGS=0V; Typ: -0.8 |
| Dynamic Electrical Characteristics | ||||
| Total Gate Charge | Qg | 38 | nC | VDS=-15V, VGS=-10V, ID=-9.1A |
| Gate-Source Charge | Qgs | 7.7 | nC | |
| Gate-Drain Charge | Qgd | 9 | nC | |
| Gate Resistance | Rg | 6.9 | Ω | VGS=0V, VDS=0V, f=1MHz |
| Input Capacitance | Ciss | 1490 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 209 | pF | |
| Reverse Transfer Capacitance | Crss | 148 | pF | |
| Turn-On Delay Time | td(on) | 38.2 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω |
| Turn-On Rise Time | tr | 16.7 | ns | |
| Turn-Off Delay Time | td(off) | 106 | ns | |
| Turn-Off Fall Time | tf | 24.1 | ns | |
2410121631_MATSUKI-ME4435_C145078.pdf
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