High junction temperature PNP transistor MCC BC856B-TP suitable for switching and AF amplifier in SOT-23 package
Key Attributes
Model Number:
BC856B-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
310mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC856B-TP
Package:
SOT-23
Product Description
Product Overview
The BC856A thru BC858C are PNP small signal transistors ideally suited for automatic insertion. They are designed for switching and AF amplifier applications, offering a high junction temperature capability of 150C. These transistors are RoHS compliant and available in a SOT-23 package.
Product Attributes
- Brand: Micro Commercial Components (MCC)
- Certifications: RoHS Compliant, UL 94 V-0 flammability rating, Moisture Sensitivity Level 1
- Material: Molded Plastic (Case)
- Availability: Halogen free available upon request by adding "-HF" suffix
Technical Specifications
| Characteristic | Symbol | BC856 | BC857 | BC858 | Unit | Test Condition |
| Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | -80 | -50 | -30 | V | |
| Collector-Emitter Voltage | VCEO | -65 | -45 | -30 | V | |
| Emitter-Base Voltage | VEBO | -5.0 | V | |||
| Collector Current | IC | -100 | mA | |||
| Peak Collector Current | ICM | -200 | mA | |||
| Peak Emitter Current | IEM | -200 | mA | |||
| Power Dissipation @ Ts=50C | Pd | 310 | mW | Note 2 | ||
| Operating & Storage Temperature | Tj, TSTG | -55~150 | C | |||
| Electrical Characteristics | ||||||
| Collector-Base Breakdown Voltage | V(BR)CBO | -80 | -50 | -30 | V | IC = -10 A, IB = 0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -65 | -45 | -30 | V | IC = -10mA, IB = 0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = -1 A, IC = 0 | ||
| DC Current Gain | hFE | 125-250 | 180-475 | 250-800 | VCE = -5.0V, IC = -2.0mA | |
| Small Signal Current Gain | hfe | 200 | 330 | 600 | VCE = -5.0V, IC = -2.0mA, f = 1.0kHz | |
| Input Impedance | hie | 2.7 | 4.5 | 8.7 | k | VCE = -5.0V, IC = -2.0mA, f = 1.0kHz |
| Output Admittance | hoe | 18 | 30 | 60 | S | VCE = -5.0V, IC = -2.0mA, f = 1.0kHz |
| Reverse Voltage Transfer Ratio | hre | 1.5x10-4 | 2x10-4 | 3x10-4 | VCE = -5.0V, IC = -2.0mA, f = 1.0kHz | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | -75 | -250 | -300 | mV | IC = -10mA, IB = -0.5mA |
| -650 | mV | IC = -100mA, IB = -5.0mA | ||||
| Base-Emitter Saturation Voltage | VBE(SAT) | -700 | -850 | mV | IC = -10mA, IB = -0.5mA | |
| mV | IC = -100mA, IB = -5.0mA | |||||
| Base-Emitter Voltage | VBE(ON) | -600 | -650 | -750 | mV | VCE = -5.0V, IC = -2.0mA |
| -820 | mV | VCE = -5.0V, IC = -10mA | ||||
| Collector-Cutoff Current | ICES | -15 | -15 | -15 | nA | VCE = -80V (BC856), -50V (BC857), -30V (BC858) |
| ICBO | -15 | -15 | -15 | nA | VCB = -30V | |
| -4.0 | A | VCB = -30V, TA = 150C | ||||
| Gain Bandwidth Product | fT | 100 | 200 | MHz | VCE = -5.0V, IC = -10mA, f = 100MHz | |
| Collector-Base Capacitance | CCBO | 3 | pF | VCB = -10V, f = 1.0MHz | ||
| Noise Figure | NF | 2 | dB | VCE = -5.0V, IC = 200A, RS = 2k, f = 1kHz | ||
| 10 | dB | f = 200Hz | ||||
| Thermal Resistance | ||||||
| Junction to Solder-point | RJS | 320 | C/W | Note 1 | ||
| Junction to Ambient | RJA | 403 | C/W | Note 1 | ||
2410121742_MCC-BC856B-TP_C435871.pdf
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