N channel power MOSFET MATSUKI ME2308S G designed for battery powered applications and surface mount
Key Attributes
Model Number:
ME2308S-G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
82mΩ@10V,2.6A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
12pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
350pF@30V
Pd - Power Dissipation:
1.04W
Gate Charge(Qg):
6.5nC@4.5V
Mfr. Part #:
ME2308S-G
Package:
SOT-23
Product Description
Product Overview
The ME2308S is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include very low RDS(ON) at various gate-source voltages and excellent DC current capability.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Certifications: Pb-free (ME2308S), Green product-Halogen free (ME2308S-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (Tj=150) | ID | 2.6 | A | TA=25 |
| Continuous Drain Current (Tj=150) | ID | 2.1 | A | TA=70 |
| Pulsed Drain Current | IDM | 10 | A | |
| Maximum Power Dissipation | PD | 1.04 | W | TA=25 |
| Maximum Power Dissipation | PD | 0.67 | W | TA=70 |
| Operating Junction & Storage Temperature Range | TJ | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 110 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper (SOT-23) |
| Static Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS=0V, ID=250μA |
| Gate Threshold Voltage | VGS(th) | 1.0 - 3.0 | V | VDS=VGS, ID=250μA |
| Gate Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 82 - 100 | mΩ | VGS=10V, ID=2.6A |
| Drain-Source On-Resistance | RDS(ON) | 96 - 130 | mΩ | VGS=4.5V, ID=2.1A |
| Diode Forward Voltage | VSD | 0.8 - 1.2 | V | IS=1A, VGS=0V |
| Dynamic Electrical Characteristics | ||||
| Total Gate Charge | Qg | 6.5 | nC | VDS=30V, VGS=10V, ID=2.6A |
| Gate-Source Charge | Qgs | 2.2 | nC | VDS=30V, VGS=10V, ID=2.6A |
| Gate-Drain Charge | Qgd | 2.7 | nC | VDS=30V, VGS=4.5V, ID=2.6A |
| Input Capacitance | Ciss | 350 | pF | VDS=30V, VGS=0V, f=1.0MHz |
| Output Capacitance | Coss | 40 | pF | VDS=30V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 12 | pF | VDS=30V, VGS=0V, f=1.0MHz |
| Gate Resistance | Rg | 0.7 | Ω | VDS=0V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 10 | ns | VDD=20V, RL =20Ω, ID=1A, VGEN=10V, RG=1Ω |
| Turn-On Rise Time | tr | 11 | ns | VDD=20V, RL =20Ω, ID=1A, VGEN=10V, RG=1Ω |
| Turn-Off Delay Time | td(off) | 29 | ns | VDD=20V, RL =20Ω, ID=1A, VGEN=10V, RG=1Ω |
| Turn-Off Fall Time | tf | 3 | ns | VDD=20V, RL =20Ω, ID=1A, VGEN=10V, RG=1Ω |
2410121457_MATSUKI-ME2308S-G_C709744.pdf
Related Products
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
