Power field effect transistor MATSUKI ME4565A-G with N channel and P channel logic enhancement mode
Key Attributes
Model Number:
ME4565A-G
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
22mΩ@10V,5.2A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
24pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
565pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
ME4565A-G
Package:
SOP-8
Product Description
Product Overview
The ME4565A series are N- and P-Channel logic enhancement mode power field-effect transistors manufactured using high cell density DMOS trench technology. This technology is optimized to minimize on-state resistance, making these devices ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package.
Product Attributes
- Brand: Matsuki (implied by datasheet)
- Product Variants: ME4565A (Pb-free), ME4565A-G (Green product-Halogen free)
- Package: SOP-8
- Technology: High cell density, DMOS trench
Technical Specifications
| Parameter | Symbol | N-Channel Unit | P-Channel Unit | Limit | Typ | Max | |
| Absolute Maximum Ratings | VDSS | Drain-Source Voltage | 40 V | -40 V | |||
| VGSS | Gate-Source Voltage | ±20 V | ±20 V | ||||
| ID (TA=25) | Continuous Drain Current | 6.9 A | -5.3 A | ||||
| ID (TA=70) | Continuous Drain Current | 5.5 A | -4.3 A | ||||
| IDM | Pulsed Drain Current | 27 A | -21 A | ||||
| PD (TA=25) | Maximum Power Dissipation | 2 W | 2 W | ||||
| TJ | Operating Junction Temperature | -55 to 150 | |||||
| Electrical Characteristics (TA =25 Unless Otherwise Specified) | V(BR)DSS | Drain-Source Breakdown Voltage | 40 V | -40 V | |||
| VGS(th) | Gate Threshold Voltage | 1 V | -1 V | 3 V | -3 V | ||
| IGSS | Gate Leakage Current | ±100 nA | ±100 nA | ||||
| IDSS | Zero Gate Voltage Drain Current | 1 µA | -1 µA | ||||
| RDS(ON) | Drain-Source On-State Resistance | 26.5 mΩ (VGS=10V, ID=5.2A) | 44 mΩ (VGS=-10V, ID=-5A) | 22 | |||
| RDS(ON) | Drain-Source On-State Resistance | 45 mΩ (VGS=4.5V, ID=4.9A) | 60 mΩ (VGS=-4.5V, ID=-2A) | 35 | |||
| VSD | Diode Forward Voltage | 0.86 V (IS=6A) | -0.86 V (IS=-5A) | 1.2 V | -1.2 V | ||
| Qg | Total Gate Charge | 15 nC (VDS=20V, VGS=10V, ID=6A) | 20 nC (VDS=-20V, VGS=-10V, ID=-5A) | ||||
| Qg | Total Gate Charge | 7 nC (VDS=20V, VGS=4.5V, ID=6A) | 10 nC (VDS=-20V, VGS=-4.5V, ID=-5A) | ||||
| Qgs | Gate-Source Charge | 4.1 nC | 4.1 nC | ||||
| Qgd | Gate-Drain Charge | 3.4 nC | 4.9 nC | ||||
| Ciss | Input Capacitance | 565 pF (VDS=15V, VGS=0V, F=1MHz) | 859 pF (VDS=-15V, VGS=0V, F=1MHz) | ||||
| Coss | Output Capacitance | 76 pF | 126 pF | ||||
| Crss | Reverse Transfer Capacitance | 24 pF | 41 pF | ||||
| Rg | Gate Resistance | 1 Ω | 1 Ω | ||||
| td(on) | Turn-On Delay Time | 13 ns (VDD=15V, RL =15Ω, ID=1A, VGEN=10V, RG=6Ω) | 39 ns (VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω) | ||||
| tr | Turn-On Rise Time | 14 ns | 19 ns | ||||
| td(off) | Turn-Off Delay Time | 36 ns | 59 ns | ||||
| tf | Turn-On Fall Time | 4 ns | 9 ns | ||||
| RJA | Thermal Resistance-Junction to Ambient | 62.5 °C/W | 62.5 °C/W |
2410121449_MATSUKI-ME4565A-G_C709738.pdf
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