Battery powered circuit transistors MATSUKI ME4565AD4 with high cell density DMOS trench technology
Key Attributes
Model Number:
ME4565AD4
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
22.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
2.7W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
ME4565AD4
Package:
TO-252-4
Product Description
Product Overview
The ME4565AD4 is a series of N- and P-Channel logic enhancement mode power field-effect transistors manufactured using high cell density DMOS trench technology. This technology minimizes on-state resistance, making these devices ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package.
Product Attributes
- Brand: Not specified in text
- Origin: Not specified in text
- Material: Not specified in text
- Color: Not specified in text
- Certifications: Pb-free (ME4565AD4), Green product-Halogen free (ME4565AD4-G)
Technical Specifications
| Parameter | Symbol | N-Channel | P-Channel | Unit | |
| Drain-Source Voltage | VDSS | 40 | -40 | V | |
| Gate-Source Voltage | VGSS | 25 | 25 | V | |
| Continuous Drain Current | ID (Tj=150) | TC=25 | 22.1 | -18.6 | A |
| TC=70 | 17.7 | -14.9 | A | ||
| TA=25 | 7.4 | -6.1 | A | ||
| TA=70 | 5.9 | -5 | A | ||
| Pulsed Drain Current | IDM | 30 | -30 | A | |
| Maximum Power Dissipation | PD | TA=25 | 2.6 | 2.7 | W |
| TA=70 | 1.67 | 1.7 | |||
| Operating Junction Temperature | TJ | -55 to 150 | |||
| Thermal Resistance-Junction to Ambient | RJA | Steady | 48 | 46 | /W |
| 10sec | 20 | 18 | |||
| Thermal Resistance-Junction to Case | RJC | 5.3 | 5 | /W | |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 40 | -40 | V |
| VGS=0V, ID=250A | |||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 to 3 | -1 to -3 | V |
| VDS=VGS, ID=250A | |||||
| Gate Leakage Current | IGSS | VDS=0V, VGS=25V | 100 | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1 | -1 | A |
| VDS=-40V, VGS=0V | |||||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID= 7A | 23 to 30 | 36 to 45 | m |
| VGS=4.5V, ID= 6A | 42 to 58 | 58 to 75 | |||
| VGS=10V, ID= 7A | |||||
| VGS=4.5V, ID= 6A | |||||
| VGS=-10V, ID= -7A | |||||
| VGS=-4.5V, ID= -6A | |||||
| Diode Forward Voltage | VSD | IS=1.7A, VGS=0V | 0.7 to 1.2 | -0.7 to -1.2 | V |
| IS=-1.7A, VGS=0V | |||||
| Total Gate Charge | Qg | VDS=20V, VGS=4.5V, ID=7A | 8 | nC | |
| VDS=-20V, VGS=-4.5V, ID=-7A | 10 | ||||
| Gate-Source Charge | Qgs | 4 | 4.3 | nC | |
| Gate-Drain Charge | Qgd | 4 | 4.5 | nC | |
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1MHZ | 0.7 | 6 | |
| Input Capacitance | Ciss | VDS=20V, VGS=0V, F=1MHz | 560 | 860 | pF |
| VDS=-20V, VGS=0V, F=1MHz | |||||
| Output Capacitance | Coss | 72 | 120 | pF | |
| Reverse Transfer Capacitance | Crss | 18 | 35 | pF | |
| Turn-On Delay Time | td(on) | VDD=15V, RL =15 ID=1A, VGEN=10V, RG=6 | 11 | 30 | ns |
| VDD=-15V, RL =15 ID=-1A, VGEN=-10V,RG=6 | |||||
| Turn-On Rise Time | tr | 13 | 8.5 | ns | |
| Turn-Off Delay Time | td(off) | 37 | 70 | ns | |
| Turn-On Fall Time | tf | 3.5 | 7 | ns | |
2410121643_MATSUKI-ME4565AD4_C165233.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
