220 Package Single N Channel Trench MOSFET MagnaChip Semicon MDP10N055TH for E Vehicle Applications
Key Attributes
Model Number:
MDP10N055TH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
47pF
Number:
1 N-channel
Pd - Power Dissipation:
188W
Input Capacitance(Ciss):
5.429nF
Output Capacitance(Coss):
1.108nF
Gate Charge(Qg):
78nC@10V
Mfr. Part #:
MDP10N055TH
Package:
TO-220
Product Description
Product Overview
The MDP10N055TH is a single N-Channel Trench MOSFET from Magnachip Semiconductor Ltd. It offers high performance with excellent on-state resistance and fast switching capabilities. This MOSFET is suitable for industrial applications including low power drives for e-bikes (e-vehicles), DC/DC converters, and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Type: Single N-Channel Trench MOSFET
- Package Type: TO-220
- RoHS Status: Halogen Free
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ | Max |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDSS | 100 | V | ||||
| Gate-Source Voltage | VGSS | ±20 | V | ||||
| Continuous Drain Current (Silicon Limited) | ID | 130 | A | TJ = 25°C | |||
| Continuous Drain Current (Package Limited) | ID | 120 | A | TC = 25°C | |||
| Continuous Drain Current (Silicon Limited) | ID | 92 | A | TC = 100°C | |||
| Pulsed Drain Current | IDM | 480 | A | ||||
| Power Dissipation (Silicon Limited) | PD | 188 | W | TC = 25°C | |||
| Power Dissipation | PD | 93 | W | TC = 100°C | |||
| Single Pulse Avalanche Energy | EAS | 288 | mJ | ||||
| Junction and Storage Temperature Range | TJ, Tstg | -55~175 | °C | ||||
| Thermal Characteristics | |||||||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | (1) | |||
| Thermal Resistance, Junction-to-Case | RθJC | 0.8 | °C/W | ||||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID = 250µA, VGS = 0V | 100 | - | - |
| Gate Threshold Voltage | VGS(th) | V | VDS = VGS, ID = 250µA | 2.0 | - | 4.0 | |
| Drain Cut-Off Current | IDSS | µA | VDS = 100V, VGS = 0V | - | - | 1.0 | |
| Gate Leakage Current | IGSS | ±µA | VGS = ±20V, VDS = 0V | - | - | ±0.1 | |
| Drain-Source ON Resistance | RDS(ON) | mΩ | VGS = 10V, ID = 50A | - | 4.4 | 5.5 | |
| Forward Transconductance | gfs | S | VDS = 10V, ID = 50A | - | 80 | - | |
| Dynamic Characteristics | |||||||
| Total Gate Charge | Qg | nC | VDS = 50V, ID = 50A, VGS = 10V | - | 78 | - | |
| Gate-Source Charge | Qgs | - | 24 | - | |||
| Gate-Drain Charge | Qgd | - | 17 | - | |||
| Input Capacitance | Ciss | pF | VDS = 40V, VGS = 0V, f = 1.0MHz | - | 5,429 | - | |
| Reverse Transfer Capacitance | Crss | - | 47 | - | |||
| Output Capacitance | Coss | - | 1,108 | - | |||
| Switching Characteristics | |||||||
| Turn-On Delay Time | td(on) | ns | VGS = 10V, VDS = 50V, ID = 50A , RG = 3.0Ω | - | 27 | - | |
| Rise Time | tr | - | 14 | - | |||
| Turn-Off Delay Time | td(off) | ns | - | 63 | - | ||
| Fall Time | tf | - | 15 | - | |||
| Gate Resistance | Rg | Ω | f= 1 MHz | - | 2.5 | - | |
| Drain-Source Body Diode Characteristics | |||||||
| Source-Drain Diode Forward Voltage | VSD | V | IS = 50A, VGS = 0V | - | 0.9 | 1.2 | |
| Body Diode Reverse Recovery Time | trr | ns | IF = 50A, dl/dt = 100A/µs | - | 62 | - | |
| Body Diode Reverse Recovery Charge | Qrr | nC | - | 124 | - | ||
2509121533_MagnaChip-Semicon-MDP10N055TH_C28880394.pdf
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