High voltage power semiconductor MASPOWER MS5N200HGC0 suitable for PV inverters and switching applications
Key Attributes
Model Number:
MS5N200HGC0
Product Custom Attributes
Drain To Source Voltage:
2kV
Current - Continuous Drain(Id):
5A
RDS(on):
10Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
58pF
Number:
1 N-channel
Output Capacitance(Coss):
133pF
Pd - Power Dissipation:
520W
Input Capacitance(Ciss):
1.86nF
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
MS5N200HGC0
Package:
TO-247
Product Description
Product Overview
The MS5N200HGC0 H1.02 Maspower is a high-performance power semiconductor designed for demanding applications. It features 100% avalanche testing, a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, enabling high-speed switching. This device is ideal for high voltage power supplies, PV inverters, and general switching applications.
Product Attributes
- Brand: Maspower
- Model: MS5N200HGC0 H1.02
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Electrical ratings | ||||||
| Drain-source voltage (VGS = 0) | VDS | 2000 | V | |||
| Gate- source voltage | VGS | ±30 | ||||
| Drain current (continuous) at TC = 25 °C | ID | 5 | A | |||
| Drain current (continuous) at TC = 100 °C | ID | 3 | A | |||
| Drain current (pulsed) | IDM | 15 | ||||
| Total dissipation at TC = 25 °C | PD | 625 | W | |||
| Avalanche Current | IAR | 2.8 | A | |||
| Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V,L=20mH) | EAS | 78.4 | mJ | |||
| Operating junction temperature | TJ | -55 | 150 | °C | ||
| Storage temperature | Tstg | -55 | 150 | °C | ||
| Maximum lead temperature for soldering purpose | TL | 300 | °C | |||
| Mounting Torque | Md | 1.13 | N·m | |||
| Weight | G | 6 | g | |||
| Electrical Characteristics (Tvj = 25°C unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | ID = 250 µA, VGS = 0 | 2000 | - | - | V |
| Zero gate voltage drain current (VGS = 0) | IDSS | VGS= 0,VDS=Max rating, TC=125 °C | - | - | 1000 | µA |
| Gate-body leakage current (VDS = 0) | IGSS | VGS = ± 30 V | - | - | ±200 | nA |
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 µA | 3.5 | - | 5.5 | V |
| Static drain-source on resistance | RDS(on) | VGS = 10V, ID =2.5A | - | 8 | 10 | Ω |
| Dynamic Characteristics | ||||||
| Forward transconductance | gfs | VDS = 50 V, ID = 2.5A | 3.8 | 6.3 | - | S |
| Input capacitance | Ciss | VDS=25V,f=1MHz,VGS=0 | - | 1860 | - | pF |
| Output capacitance | ||||||
| Reverse transfer capacitance | ||||||
| Total gate charge | Qg | VDD=1000V,ID=2.5A VGS=10V | - | 75 | - | nC |
| Gate-source charge | Qgs | - | 10 | - | ||
| Gate-drain charge | Qgd | - | 50 | - | ||
| Switching times | ||||||
| Turn-on delay time | td(on) | Resistive load VDD = 1000 V, ID =2.5A, VGS = 10 V, RG = 5 Ω(Extermal) | - | 32 | - | ns |
| Rise time | tr | - | 45 | - | ||
| Turn-off-delay time | td(off) | - | 86 | - | ||
| Fall time | tf | - | 78 | - | ||
| Source drain diode | ||||||
| Source-drain current | ISD | - | - | 5 | A | |
| Source-drain current (pulsed) | ISDM | - | - | 15 | ||
| Forward on voltage | VSD | ISD= 2.5A, VGS= 0 | - | - | 1.5 | V |
| Reverse recovery time | trr | ISD= 2.5A, di/dt=100A/µs VDD= 100 V | - | 560 | - | ns |
| Reverse recovery time | ISD=2.5A, -di/dt=100A/µs VDD=100V TJ=150°C | - | 420 | - | ns | |
| Reverse recovery charge | Qrr | - | 420 | - | nC | |
| Reverse recovery charge | - | 380 | - | nC | ||
| Reverse recovery current | IRRM | - | 2.2 | - | A | |
| Reverse recovery current | - | 1.8 | - | A | ||
| Thermal data | ||||||
| Thermal resistance junction-case max | Rthj-case | 0.20 | °C/W | |||
| Thermal resistance junction-ambient max | Rthj-amb | 40 | °C/W | |||
2411261901_MASPOWER-MS5N200HGC0_C37635840.pdf
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