NPN Small Signal Transistor MCC BC817-40HE3-TP 300mW Power Dissipation SOT-23 Package AEC-Q101 Qualified
NPN Small Signal Transistor 300mW
This NPN small signal transistor, available in the BC817-16HE3 through BC817-40HE3 series, is designed for general-purpose applications. It features a 300mW power dissipation and is housed in a SOT-23 package. The device is AEC-Q101 qualified, Halogen Free, and RoHS compliant, making it suitable for various electronic designs requiring reliable performance and environmental consideration.
Product Attributes
- Brand: MCCSEMI.COM
- Type: NPN Small Signal Transistor
- Power Dissipation: 300mW
- Package: SOT-23
- Certifications: AEC-Q101 Qualified, Halogen Free. "Green" Device, RoHS Compliant
- Moisture Sensitivity Level: 1
- Flammability Rating: UL 94 V-0
Technical Specifications
| Parameter | Symbol | Rating | Conditions | Unit | BC817-16HE3 | BC817-25HE3 | BC817-40HE3 |
|---|---|---|---|---|---|---|---|
| Collector Current | IC | 500 | mA | ||||
| Peak Collector Current | ICM | 1000 | mA | ||||
| Collector-Emitter Voltage | VCEO | 45 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector-Base Voltage | VCBO | 50 | V | ||||
| Collector Power Dissipation | PC | 300 | mW | ||||
| Operating Junction Temperature Range | -55 to +150 | ||||||
| Storage Temperature Range | -55 to +150 | ||||||
| Thermal Resistance | 417 | Junction to Ambient | /W | ||||
| Collector Cutoff Current | ICBO | 0.1 | VCB=45V, IE=0 | A | |||
| Emitter-Base Cutoff Current | IEBO | 0.1 | VEB=4V, IC=0 | A | |||
| Base-Emitter Voltage | VBE | 1.2 | VCE=1V, IC=500mA | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | VCE=1V, IC=500mA | V | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | IC=500mA, IB=50mA | V | |||
| DC Current Gain | hFE1 | 100-250 | VCE=1V, IC=100mA | 100-250 | 160-400 | 250-600 | |
| DC Current Gain | hFE2 | VCE=1V, IC=500mA, IB=50mA | 600 (Typ) | 600 (Typ) | 600 (Typ) | ||
| Transition Frequency | fT | 100 | VCE=5V, IC=10mA, f=100MHz | MHz | |||
| Collector Capacitance | Cob | 10 | VCB=10V, f=1MHz | pF | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | IC=10mA, IB=0 | V | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | IC=10A, IE=0 | V | |||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | IE=1A, IC=0 | V |
2401291345_MCC-BC817-40HE3-TP_C3199885.pdf
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