NPN Small Signal Transistor MCC BC817-40HE3-TP 300mW Power Dissipation SOT-23 Package AEC-Q101 Qualified

Key Attributes
Model Number: BC817-40HE3-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC817-40HE3-TP
Package:
SOT-23
Product Description

NPN Small Signal Transistor 300mW

This NPN small signal transistor, available in the BC817-16HE3 through BC817-40HE3 series, is designed for general-purpose applications. It features a 300mW power dissipation and is housed in a SOT-23 package. The device is AEC-Q101 qualified, Halogen Free, and RoHS compliant, making it suitable for various electronic designs requiring reliable performance and environmental consideration.

Product Attributes

  • Brand: MCCSEMI.COM
  • Type: NPN Small Signal Transistor
  • Power Dissipation: 300mW
  • Package: SOT-23
  • Certifications: AEC-Q101 Qualified, Halogen Free. "Green" Device, RoHS Compliant
  • Moisture Sensitivity Level: 1
  • Flammability Rating: UL 94 V-0

Technical Specifications

Parameter Symbol Rating Conditions Unit BC817-16HE3 BC817-25HE3 BC817-40HE3
Collector Current IC 500 mA
Peak Collector Current ICM 1000 mA
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector-Base Voltage VCBO 50 V
Collector Power Dissipation PC 300 mW
Operating Junction Temperature Range -55 to +150
Storage Temperature Range -55 to +150
Thermal Resistance 417 Junction to Ambient /W
Collector Cutoff Current ICBO 0.1 VCB=45V, IE=0 A
Emitter-Base Cutoff Current IEBO 0.1 VEB=4V, IC=0 A
Base-Emitter Voltage VBE 1.2 VCE=1V, IC=500mA V
Collector-Emitter Saturation Voltage VCE(sat) 0.7 VCE=1V, IC=500mA V
Base-Emitter Saturation Voltage VBE(sat) 1.2 IC=500mA, IB=50mA V
DC Current Gain hFE1 100-250 VCE=1V, IC=100mA 100-250 160-400 250-600
DC Current Gain hFE2 VCE=1V, IC=500mA, IB=50mA 600 (Typ) 600 (Typ) 600 (Typ)
Transition Frequency fT 100 VCE=5V, IC=10mA, f=100MHz MHz
Collector Capacitance Cob 10 VCB=10V, f=1MHz pF
Collector-Emitter Breakdown Voltage V(BR)CEO 45 IC=10mA, IB=0 V
Collector-Base Breakdown Voltage V(BR)CBO 50 IC=10A, IE=0 V
Emitter-Base Breakdown Voltage V(BR)EBO 5 IE=1A, IC=0 V

2401291345_MCC-BC817-40HE3-TP_C3199885.pdf

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