High current MOSFET MASPOWER MS60N06HGB0 60 volt 60 ampere avalanche tested for power supply designs
Key Attributes
Model Number:
MS60N06HGB0
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
RDS(on):
6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
487pF@25V
Number:
-
Input Capacitance(Ciss):
2.7nF@25V
Pd - Power Dissipation:
180W
Gate Charge(Qg):
115nC@15V
Mfr. Part #:
MS60N06HGB0
Package:
TO-3PB
Product Description
Product Overview
The MS60N06HGB0 H1.02 Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features a VDS of 60V and ID of 60A, with improved dv/dt capability and fast switching characteristics. This device is 100% avalanche tested, making it suitable for power factor correction (PFC), switched mode power supplies (SMPS), and uninterruptible power supply (UPS) systems.
Product Attributes
- Brand: Maspower
- Model: MS60N06HGB0 H1.02
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Ratings | VDSS | 60 | V | |||
| VGSS | 20 | V | ||||
| ID (TC=25) | 60 | A | ||||
| ID (TC=100) | 40 | A | ||||
| IDM (Pulse) | 240 | A | ||||
| EAS (Avalanche Energy) | Tj=25,ID=IAR,VDD=50V | 653 | mJ | |||
| PD (Max Power Dissipation) | TC=25 | 180 | W | |||
| Derate above 25 | 0.864 | W/ | ||||
| TJ,TSTG (Operating/Storage Temp) | -55 | +150 | ||||
| Electrical Characteristics | BVDSS | ID=250A,VGS=0V | 60 | V | ||
| IDSS (Zero Gate Voltage) | VDS=VDSS,VGS=0V, Tc=25 | 1 | A | |||
| IDSS (Zero Gate Voltage) | VDS=VDSS,VGS=0V, Tc=125 | 50 | A | |||
| IGSS (Gate-Body Leakage) | VGS=20V,VDS=0V | 100 | nA | |||
| On-Characteristics | VGS(th) (Gate Threshold) | VDS=VGS,ID=250A | 2 | 2.8 | 3.6 | V |
| RDS(ON) (Static Drain-Source) | VGS=10V,ID=50A | 5 | 6 | m | ||
| Dynamic Characteristics | Ciss (Input Capacitance) | VDS=25V, VGS=0V, f=1.0MHZ | 2700 | pF | ||
| Coss (Output Capacitance) | VDS=25V, VGS=0V, f=1.0MHZ | 1016 | pF | |||
| Crss (Reverse Transfer Capacitance) | VDS=25V, VGS=0V, f=1.0MHZ | 487 | pF | |||
| Switching-Characteristics | td(on) (Turn-On Delay) | VDS=28V,ID=42A, VGS=15V,RG=25 | 52 | ns | ||
| tr (Turn-On Rise Time) | VDS=28V,ID=42A, VGS=15V,RG=25 | 142 | ns | |||
| td(Off) (Turn-Off Delay) | VDS=28V,ID=42A, VGS=15V,RG=25 | 355 | ns | |||
| tf (Turn-Off Rise Time) | VDS=28V,ID=42A, VGS=15V,RG=25 | 230 | ns | |||
| Total Gate Charge | Qg | VDS=28V,ID=42A, VGS=15V,RG=25 | 115 | nC | ||
| Qgs | VDS=28V,ID=42A, VGS=15V,RG=25 | 13 | nC | |||
| Qgd | VDS=28V,ID=42A, VGS=15V,RG=25 | 55 | nC | |||
| Drain-Source Diode | VSD (Forward Voltage) | VGS=0V,IS=40A | 1.2 | V | ||
| IS (Diode Forward Current) | 60 | A | ||||
| Trr (Reverse Recovery Time) | IS=180A, dI/dT=100A/S, VGS=0V | 100 | nS | |||
| Qrr (Reverse Recovery Charge) | IS=180A, dI/dT=100A/S, VGS=0V | 0.33 | C | |||
| Thermal Characteristic | Rth(j-C) (Junction to Case) | 0.65 | /W | |||
| Rth(j-A) (Junction to Ambient) | 30 | /W |
2411220032_MASPOWER-MS60N06HGB0_C41417585.pdf
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