Low Voltage Power MOSFET MATSUKI ME7114S N Channel with Enhanced Logic Mode and Minimal On Resistance
Key Attributes
Model Number:
ME7114S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
71A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
1.69nF@15V
Pd - Power Dissipation:
52W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
ME7114S
Package:
DFN-3(3x3)
Product Description
Product Overview
The ME7114S-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring low-side switching and low in-line power loss in a compact surface-mount package. Its key features include extremely low RDS(ON) and exceptional DC current capability.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Certifications: Green product-Halogen free
Technical Specifications
| Parameter | Symbol | Maximum Ratings | Unit | Limit | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | ||||||
| Gate-Source Voltage | VGS | 20 | V | ||||||
| Continuous Drain Current(Tj=150)* | ID | TC=25 | 71 | A | |||||
| TC=70 | 57 | A | |||||||
| Continuous Drain Current* | ID | TA=25 | 18.4 | A | |||||
| TA=70 | 14.7 | A | |||||||
| Pulsed Drain Current | IDM | 74 | A | ||||||
| Maximum Power Dissipation* | PD | TC=25 | 52 | W | |||||
| TC=70 | 33 | W | |||||||
| Maximum Power Dissipation* | PD | TA=25 | 3.8 | W | |||||
| TA=70 | 2.4 | W | |||||||
| Operating Junction Temperature | TJ | -55 to 150 | |||||||
| Thermal Resistance-Junction to Ambient* | RJA | Typ | 26 | /W | |||||
| Max | 33 | /W | |||||||
| Thermal Resistance-Junction to Case* | RJC | Typ | 1.9 | /W | |||||
| Max | 2.4 | /W | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | |||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 3.0 | V | ||||
| Gate Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | |||||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | |||||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=13A | 5.8 | 7 | m | ||||
| VGS=4.5V, ID=10A | 8.5 | 10.5 | m | ||||||
| Diode Forward Voltage | VSD | IS=2.8A, VGS=0V | 0.75 | 1.1 | V | ||||
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=13A | 37 | nC | |||||
| Total Gate Charge | Qg | VDS=15V, VGS=4.5V, ID=13A | 18 | nC | |||||
| Gate-Source Charge | Qgs | 7.7 | nC | ||||||
| Gate-Drain Charge | Qgd | 8.8 | nC | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, F=1MHz | 1690 | pF | |||||
| Output Capacitance | Coss | 260 | pF | ||||||
| Reverse Transfer Capacitance | Crss | 84 | pF | ||||||
| Gate-Resistance | Rg | VDS=0V, VGS=0V, F=1MHz | 0.9 | ||||||
| Turn-On Delay Time | td(on) | VDS=15V, RL =15 ID=1A, VGEN=10V RG=6 | 20 | ns | |||||
| Turn-On Rise Time | tr | 16 | ns | ||||||
| Turn-Off Delay Time | td(off) | 63 | ns | ||||||
| Turn-Off Fall Time | tf | 11 | ns |
2410121527_MATSUKI-ME7114S_C2841369.pdf
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