Power management P channel MOSFET MATSUKI ME2309 G offering low inline power loss in compact package
Key Attributes
Model Number:
ME2309-G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.9A
RDS(on):
170mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF@30V
Number:
1 P-Channel
Output Capacitance(Coss):
23pF
Input Capacitance(Ciss):
358pF@30V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.3nC@4.5V
Mfr. Part #:
ME2309-G
Package:
SOT-23
Product Description
Product Overview
The ME2309 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Its super high density cell design offers extremely low RDS(ON) and exceptional on-resistance with maximum DC current capability.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Certifications: Pb-free (ME2309), Green product-Halogen free (ME2309-G)
Technical Specifications
| Parameter | Symbol | Limit | Min | Typ | Max | Unit | Notes | |
| Absolute Maximum Ratings | Drain-Source Voltage | VDS | -60 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | |||||
| Continuous Drain Current (TA=25) | ID | -1.9 | A | |||||
| Continuous Drain Current (TA=70) | ID | -1.5 | A | |||||
| Pulsed Drain Current | IDM | -7.6 | A | |||||
| Maximum Power Dissipation (TA=25) | PD | 1.4 | W | |||||
| Maximum Power Dissipation (TA=70) | PD | 0.9 | W | |||||
| Storage Temperature Range | Tstg | -55 | 150 | |||||
| Thermal Resistance-Junction to Ambient* | RJA | 90 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper | ||||
| Diode Forward Voltage | VSD | IS=-1.2A, VGS=0V | -1.2 | V | ||||
| Electrical Characteristics | Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -60 | V | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -3 | V | |||
| Gate Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | μA | ||||
| Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-1.8A | 170 | 215 | mΩ | |||
| Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-1.4A | 200 | 260 | mΩ | |||
| Dynamic Characteristics | Total Gate Charge | Qg | VDS=-48V, VGS=-4.5V, ID=-1A | 6.3 | nC | |||
| Gate-Source Charge | Qgs | 2.3 | nC | |||||
| Gate-Drain Charge | Qgd | 1.8 | nC | |||||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V,f=1MHz | 358 | pF | ||||
| Output Capacitance | Coss | 23 | pF | |||||
| Reverse Transfer Capacitance | Crss | 17 | pF | |||||
| Switching Characteristics | Turn-On Delay Time | td(on) | VDS=-30V, RL =30Ω, RGS=3.3Ω, VGS=-10V, ID=-1A | 20 | ns | |||
| Turn-On Rise Time | tr | 33.1 | ns | |||||
| Turn-Off Delay Time | td(off) | 5.2 | ns | |||||
| Turn-Off Fall Time | tf | 3.8 | ns |
2410121657_MATSUKI-ME2309-G_C709748.pdf
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