High breakdown voltage MICROCHIP 2N6660 N Channel Vertical DMOS FET for switching and amplification
Key Attributes
Model Number:
2N6660
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.5A
RDS(on):
3Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Pd - Power Dissipation:
6.25W
Output Capacitance(Coss):
40pF
Input Capacitance(Ciss):
50pF
Mfr. Part #:
2N6660
Package:
TO-5-3
Product Description
Product Overview
The 2N6660 is an enhancement-mode, N-Channel, Vertical DMOS FET utilizing a silicon-gate manufacturing process. It offers the power-handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally-induced secondary breakdown, making it ideal for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. It is particularly well-suited for motor controls, converters, amplifiers, switches, power supply circuits, and various driver applications.
Product Attributes
- Brand: Microchip Technology Inc.
- Product Code: 2N6660
- Package Type: TO-39
- Environmental Compliance: Pb-free/ROHS-compliant
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Units | Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-to-source voltage | BVDSS | 60 | - | - | V | VGS= 0V, ID= 10A |
| Gate-to-source voltage | VGS | - | - | ±20 | V | - |
| Operating and Storage Temperature | TA | -55 | - | 150 | °C | - |
| ELECTRICAL CHARACTERISTICS (TA = +25°C unless otherwise specified) | ||||||
| Gate threshold voltage | VGS(th) | 0.8 | - | 2.0 | V | VGS= VDS, ID= 1.0mA |
| VGS(th) change with temperature | ΔVGS(th) | - | -3.8 | -5.5 | mV/°C | VGS= VDS, ID= 1.0mA (Note 2) |
| Gate body leakage current | IGSS | - | - | 100 | nA | VGS= ±20V, VDS= 0V |
| Zero gate voltage drain current | IDSS | - | - | 10 | µA | VGS= 0V, VDS= Max rating |
| On-state drain current | ID(ON) | 1.5 | - | - | A | VGS= 10V, VDS= 10V |
| Static drain-to-source on-state resistance | RDS(ON) | - | - | 5.0 | Ω | VGS= 5.0V, ID= 0.3A |
| Static drain-to-source on-state resistance | RDS(ON) | - | - | 3.0 | Ω | VGS= 10V, ID= 1.0A |
| Forward transconductance | GFS | 170 | - | - | mmho | VDS= 25V, ID= 0.5A |
| Input capacitance | CISS | - | - | 50 | pF | VGS= 0V, VDS= 24V, f = 1.0MHz |
| Common source output capacitance | COSS | - | - | 40 | pF | VGS= 0V, VDS= 24V, f = 1.0MHz |
| Reverse transfer capacitance | CRSS | - | - | 10 | pF | VGS= 0V, VDS= 24V, f = 1.0MHz |
| Turn-on time | t(ON) | - | - | 10 | ns | VDD= 25V, ID= 1.0A, RGEN= 25Ω |
| Turn-off time | t(OFF) | - | - | 10 | ns | VDD= 25V, ID= 1.0A, RGEN= 25Ω |
| Diode Parameters | ||||||
| Diode forward voltage drop | VSD | - | 1.2 | - | V | VGS= 0V, ISD= 1.0A (Note 1) |
| Reverse recovery time | trr | - | 350 | - | ns | VGS= 0V, ISD= 1.0A (Note 2) |
| THERMAL CHARACTERISTICS | ||||||
| ID(1) continuous | - | 410 | - | - | mA | TO-39 |
| ID pulsed | - | - | 3.0 | - | A | TO-39 |
| Power Dissipation @TA = 25°C | - | - | 6.25 | - | W | TO-39 |
2410010203_MICROCHIP-2N6660_C618544.pdf
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