Power Management N Channel MOSFET ME35N06 G with Low On Resistance and High Cell Density Design
Key Attributes
Model Number:
ME35N06-G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
25.4A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
27mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
30pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
885pF@15V
Pd - Power Dissipation:
33W
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
ME35N06-G
Package:
TO-252-3L
Product Description
Product Overview
The ME35N06-G is a high-performance N-Channel logic enhancement mode power MOSFET utilizing advanced DMOS trench technology with high cell density. This design significantly reduces on-state resistance, making it ideal for low-voltage applications such as power management in notebook computers, cellular phones, and other battery-powered devices. Its efficiency in low in-line power loss is particularly beneficial for small outline surface mount packages.
Product Attributes
- Brand: ME
- Product Line: ME35N06/ME35N06-G
- Type: N-Channel MOSFET
- Package: TO-252-3L
- Certifications: Green product-Halogen free
Technical Specifications
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Absolute Maximum Ratings (TC=25 Unless Otherwise Noted) | |||
| Drain-Source Voltage | VDS | 60 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC=25) | ID | 25.4 | A |
| Continuous Drain Current (TC=70) | ID | 23.4 | A |
| Pulsed Drain Current | IDM | 101 | A |
| Maximum Power Dissipation (TC=25) | PD | 33 | W |
| Maximum Power Dissipation (TC=70) | PD | 21 | W |
| Operating Junction Temperature | TJ | -55 to 150 | |
| Thermal Resistance-Junction to Case | RθJC | 3.8 | /W |
| Electrical Characteristics (TC =25 Unless Otherwise Specified) | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250μA) | BVDSS | 60 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250μA) | VGS(th) | 1 to 3 | V |
| Gate Leakage Current (VDS=0V, VGS=±20V) | IGSS | ±100 | nA |
| Zero Gate Voltage Drain Current (VDS=48V, VGS=0V) | IDSS | 1 | μA |
| Drain-Source On-Resistance (VGS=10V, ID=20A) | RDS(ON) | 27 to 32 | mΩ |
| Drain-Source On-Resistance (VGS=4.5V, ID=16A) | RDS(ON) | 34 to 40 | mΩ |
| Diode Forward Voltage (IS=1A, VGS=0V) | VSD | 0.7 to 1.2 | V |
| Dynamic Characteristics | |||
| Total Gate Charge (VDS=30V, VGS=10V, ID=20A) | Qg | 23 | nC |
| Total Gate Charge (VDS=30V, VGS=4.5V, ID=20A) | Qg | 12 | nC |
| Gate-Source Charge | Qgs | 4.8 | nC |
| Gate-Drain Charge | Qgd | 6.2 | nC |
| Input Capacitance (VDS=15V, VGS=0V, f=1MHz) | Ciss | 885 | pF |
| Output Capacitance | Coss | 98 | pF |
| Reverse Transfer Capacitance | Crss | 30 | pF |
| Turn-On Delay Time (VDS=30V, RL=1.5Ω, VGEN=10V, RG=3Ω) | td(on) | 12 | ns |
| Turn-On Rise Time | tr | 8 | ns |
| Turn-Off Delay Time | td(off) | 43 | ns |
| Turn-Off Fall Time | tf | 4 | ns |
2410121449_MATSUKI-ME35N06-G_C709753.pdf
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