MICROCHIP TP2540N8 G Vertical DMOS P Channel FET for Telecommunication and Photovoltaic Applications
Key Attributes
Model Number:
TP2540N8-G
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
1.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25Ω@10V,100mA
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 P-Channel
Input Capacitance(Ciss):
125pF
Pd - Power Dissipation:
1.6W
Mfr. Part #:
TP2540N8-G
Package:
SOT-89
Product Description
Product Overview
The TP2540 is a P-Channel Enhancement-Mode Vertical DMOS FET designed for various switching and amplifying applications. It features a low threshold voltage, high input impedance, low input capacitance, and fast switching speeds. Its vertical DMOS structure and silicon-gate manufacturing process provide the power handling capabilities of bipolar transistors with the inherent advantages of MOS devices, such as a positive temperature coefficient and freedom from thermal runaway and secondary breakdown. This device is ideal for logic-level interfaces, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general purpose line drivers, and telecommunication switches.
Product Attributes
- Brand: Microchip Technology Inc.
- Product Code: TP2540
- Material: Vertical DMOS structure, silicon-gate manufacturing process
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | BVDSS | -400 | V | VGS = 0V, ID = 2 mA | ||
| Drain-to-Gate Voltage | BVDGS | V | ||||
| Gate-to-Source Voltage | VGS | 20 | V | |||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| DC Electrical Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | 1 | 2.4 | V | VGS = VDS, ID = 1 mA | |
| Change in VGS(th) with Temperature | VGS(th) | 4.8 | mV/C | VGS = VDS, ID = 1 mA (Note 1) | ||
| Gate Body Leakage Current | IGSS | 100 | nA | VGS = 20V, VDS = 0V | ||
| Zero-Gate Voltage Drain Current | IDSS | 10 | A | VGS = 0V, VDS = Maximum rating | ||
| Zero-Gate Voltage Drain Current | IDSS | 1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125C (Note 1) | ||
| On-State Drain Current | ID(ON) | 0.2 | 0.3 | A | VGS = 4.5V, VDS = 25V | |
| On-State Drain Current | ID(ON) | 0.4 | 1.1 | A | VGS = 10V, VDS = 25V | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 20 | 30 | VGS = 4.5V, ID = 100 mA | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 19 | 25 | VGS = 10V, ID = 100 mA | ||
| Change in RDS(ON) with Temperature | RDS(ON) | 0.75 | %/C | VGS = 10V, ID = 100 mA (Note 1) | ||
| AC Electrical Characteristics | ||||||
| Forward Transconductance | GFS | 100 | 175 | mmho | VDS = 25V, ID = 100 mA | |
| Input Capacitance | CISS | 60 | 125 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Common-Source Output Capacitance | COSS | 20 | 70 | pF | ||
| Reverse Transfer Capacitance | CRSS | 10 | 25 | pF | ||
| Turn-On Delay Time | td(ON) | 10 | ns | VDD = 25V, ID = 0.4A, RGEN = 25 | ||
| Rise Time | tr | 10 | ns | |||
| Turn-Off Delay Time | td(OFF) | 20 | ns | |||
| Fall Time | tf | 13 | ns | |||
| Diode Parameter | ||||||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 0V, ISD = 100 mA (Note 1) | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 100 mA | ||
| Temperature Specifications | ||||||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| Package Thermal Resistance | ||||||
| 3-lead TO-92 | JA | 132 | C/W | |||
| 3-lead SOT-89 | JA | 133 | C/W | |||
| Thermal Characteristics | ||||||
| Package | ID (Continuous) (mA) | ID (Pulsed) (mA) | Power Dissipation at TA = 25C (W) | IDR (Note 1) (mA) | IDRM (mA) | |
| 3-lead TO-92 | 86 | 600 | 0.74 | 86 | 600 | |
| 3-lead SOT-89 | 125 | 1200 | 1.6 (Note 2) | 125 | 1200 | |
Note 1: Specification is obtained by characterization and is not 100% tested.
Note 2: Mounted on an FR5 board, 25 mm x 25 mm x 1.57 mm
2410121807_MICROCHIP-TP2540N8-G_C629209.pdf
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