Low threshold voltage transistor MICROCHIP DN2540N5-G designed for fast switching and low capacitance
Key Attributes
Model Number:
DN2540N5-G
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
17Ω@0V
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1pF
Number:
1 N-channel
Output Capacitance(Coss):
12pF
Input Capacitance(Ciss):
300pF@25V
Pd - Power Dissipation:
15W
Gate Charge(Qg):
-
Mfr. Part #:
DN2540N5-G
Package:
TO-220
Product Description
Supertex DN2540 N-Channel Depletion-Mode Vertical DMOS FET
The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor designed with an advanced vertical DMOS structure. It offers high input impedance, low input capacitance, fast switching speeds, and low on-resistance, making it free from secondary breakdown and thermally-induced runaway. This device is suitable for various switching and amplifying applications, including normally-on switches, solid-state relays, converters, linear amplifiers, constant current sources, power supply circuits, and telecommunication systems.
Product Attributes
- Brand: Supertex inc.
- Website: www.supertex.com
- Certifications: lead (Pb)-free / RoHS compliant (-G suffix)
Technical Specifications
| Part Number | Package | BVDSX/BVDGX (V) | RDS(ON) max () | IDSS min (mA) | ID (continuous) (mA) | ID (pulsed) (mA) | Power Dissipation @TC = 25C (W) |
|---|---|---|---|---|---|---|---|
| DN2540N3-G | TO-92 | 400 | 25 | 150 | 120 | 500 | 1.0 |
| DN2540N5-G | TO-220 | 400 | 25 | 150 | 500 | 500 | 15 |
| DN2540N8-G | TO-243AA (SOT-89) | 400 | 25 | 150 | 170 | 500 | 1.6 |
Mounted on FR5 board, 25mm x 25mm x 1.57mm, TA = 25C.
Electrical Characteristics (TA = 25C unless otherwise specified)
| Symbol | Parameter | Min | Typ | Max | Units | Conditions |
|---|---|---|---|---|---|---|
| BVDSX | Drain-to-source breakdown voltage | 400 | - | - | V | VGS = -5.0V, ID = 100A |
| VGS(OFF) | Gate-to-source off voltage | -1.5 | - | -3.5 | V | VDS = 25V, ID = 10A |
| VGS(OFF) | Change in VGS(OFF) with temperature | - | - | -4.5 | mV/C | VDS = 25V, ID = 10A |
| IGSS | Gate body leakage current | - | - | 100 | nA | VGS = 20V, VDS = 0V |
| ID(OFF) | Drain-to-source leakage current | - | - | 10 | A | VDS = Max rating, VGS = -10V |
| ID(OFF) | Drain-to-source leakage current | - | - | 1.0 | mA | VDS = 0.8 Max Rating, VGS = -10V, TA = 125C |
| IDSS | Saturated drain-to-source current | 150 | - | - | mA | VGS = 0V, VDS = 25V |
| RDS(ON) | Static drain-to-source on-state resistance | - | 17 | 25 | VGS = 0V, ID = 120mA | |
| RDS(ON) | Change in RDS(ON) with temperature | - | - | 1.1 | %/C | VGS = 0V, ID = 120mA |
| GFS | Forward transconductance | - | 325 | - | mmho | VDS = 10V, ID = 100mA |
| CISS | Input capacitance | - | 200 | 300 | pF | VGS = -10V, VDS = 25V, f = 1MHz |
| COSS | Common source output capacitance | - | 12 | 30 | pF | VGS = -10V, VDS = 25V, f = 1MHz |
| CRSS | Reverse transfer capacitance | - | 1.0 | 5.0 | pF | VGS = -10V, VDS = 25V, f = 1MHz |
| td(ON) | Turn-on delay time | - | - | 10 | ns | VDD = 25V, ID = 150mA, RGEN = 25 |
| tr | Rise time | - | - | 15 | ns | VDD = 25V, ID = 150mA, RGEN = 25 |
| td(OFF) | Turn-off delay time | - | - | 15 | ns | VDD = 25V, ID = 150mA, RGEN = 25 |
| tf | Fall time | - | - | 20 | ns | VDD = 25V, ID = 150mA, RGEN = 25 |
| VSD | Diode forward voltage drop | - | - | 1.8 | V | VGS = -10V, ISD = 120mA |
| trr | Reverse recovery time | - | 800 | - | ns | VGS = -10V, ISD = 1.0A |
2410121452_MICROCHIP-DN2540N5-G_C80871.pdf
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