86--136 6733 2386
quality Integral source drain diode Vertical DMOS transistor MICROCHIP VN0104N3-G with fast switching speeds factory
quality Integral source drain diode Vertical DMOS transistor MICROCHIP VN0104N3-G with fast switching speeds factory

Integral source drain diode Vertical DMOS transistor MICROCHIP VN0104N3-G with fast switching speeds

Key Attributes
Model Number: VN0104N3-G
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
2.4V
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Input Capacitance(Ciss):
65pF
Pd - Power Dissipation:
1W
Mfr. Part #:
VN0104N3-G
Package:
TO-92
Product Description

Product Overview

This enhancement-mode (normally-off) Vertical DMOS FET utilizes Supertex's silicon-gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. It is free from thermal runaway and thermally-induced secondary breakdown, making it ideal for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. Key advantages include freedom from secondary breakdown, low power drive requirement, ease of paralleling, low CISS, fast switching speeds, excellent thermal stability, an integral source-drain diode, and high input impedance with high gain.

Product Attributes

  • Brand: Supertex inc.
  • Website: www.supertex.com
  • Certifications: Lead (Pb)-free / RoHS compliant (-G denotes package)
  • Packaging: TO-92
  • Product Marking: SiVN0104 YYWW (YY=Year, WW=Week, ="Green" Packaging)

Technical Specifications

ParameterValueConditionsNotes
BVDSS (Drain-to-source breakdown voltage)40VVGS = 0V, ID = 1.0mA
BVDGS (Drain-to-gate voltage)40V
Gate-to-source voltage20V
Operating and storage temperature-55C to +150C
VGS(th) (Gate threshold voltage)0.8 - 2.4VVGS = VDS, ID= 1.0mA
VGS(th) (Change in VGS(th) with temperature)-3.8 -5.5 mV/CVGS = VDS, ID= 1.0mA
IGSS (Gate body leakage)- 100 nAVGS = 20V, VDS = 0V
IDSS (Zero gate voltage drain current)- 1.0 AVGS = 0V, VDS = Max RatingVDS = 0.8 Max Rating, VGS = 0V, TA = 125C
ID(ON) (On-state drain current)0.5 - AVGS = 5.0V, VDS = 25V
ID(ON) (On-state drain current)2.0 - AVGS = 10V, VDS = 25V
RDS(ON) (Static drain-to-source on-state resistance)- 3.0 5.0 VGS = 5.0V, ID = 250mA
RDS(ON) (Static drain-to-source on-state resistance)- 2.5 3.0 VGS = 10V, ID = 1.0A
RDS(ON) (Change in RDS(ON) with temperature)- 0.70 1.0 %/CVGS = 10V, ID = 1.0A
GFS (Forward transductance)300 - 450 mmhoVDS = 25V, ID = 500mA
CISS (Input capacitance)- 55 - 65 pFVGS = 0V, VDS = 25V, f = 1.0MHz
COSS (Common source output capacitance)- 20 - 25 pFVGS = 0V, VDS = 25V, f = 1.0MHz
CRSS (Reverse transfer capacitance)- 5.0 - 8.0 pFVGS = 0V, VDS = 25V, f = 1.0MHz
td(ON) (Turn-on delay time)- 3.0 - 5.0 nsVDD = 25V, ID = 1.0A, RGEN = 25
tr (Rise time)- 5.0 - 8.0 nsVDD = 25V, ID = 1.0A, RGEN = 25
td(OFF) (Turn-off delay time)- 6.0 - 9.0 nsVDD = 25V, ID = 1.0A, RGEN = 25
tf (Fall time)- 5.0 - 8.0 nsVDD = 25V, ID = 1.0A, RGEN = 25
VSD (Diode forward voltage drop)- 1.2 - 1.8 VVGS = 0V, ISD = 1.0A
trr (Reverse recovery time)- 400 - nsVGS = 0V, ISD = 1.0A
ID (continuous)350mALimited by max rated Tj
ID (pulsed)2.0A
Power Dissipation @TC = 25C1.0WTO-92 Package
ja (Typical Thermal Resistance)132C/WTO-92 Package

2410121642_MICROCHIP-VN0104N3-G_C632593.pdf

Related Products
quality General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage factory
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
quality Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions factory
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device factory
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.