86--136 6733 2386
quality AEC Q101 Qualified MCC 2N7002KHE3 TPAU N Channel MOSFET with Trench MV Technology and ESD Protection factory
quality AEC Q101 Qualified MCC 2N7002KHE3 TPAU N Channel MOSFET with Trench MV Technology and ESD Protection factory

AEC Q101 Qualified MCC 2N7002KHE3 TPAU N Channel MOSFET with Trench MV Technology and ESD Protection

Key Attributes
Model Number: 2N7002KHE3-TPAU
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
1.9Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@1mA
Type:
N-Channel
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
880pC@10V
Mfr. Part #:
2N7002KHE3-TPAU
Package:
SOT-23
Product Description

Product Overview

The 2N7002KHE3 is an N-Channel MOSFET featuring AEC-Q101 qualification and ESD protection up to 2KV (HBM). It utilizes Trench MV MOSFET Technology and is designed for high reliability with Moisture Sensitivity Level 1 and UL 94 V-0 flammability rating. This "Green" device is Halogen Free and RoHS Compliant, suitable for a wide operating junction temperature range of -55C to +150C.

Product Attributes

  • Brand: MCCSEMI.COM
  • Model: 2N7002KHE3
  • Qualification: AEC-Q101
  • ESD Protection: Up to 2KV (HBM)
  • Technology: Trench MV MOSFET
  • Moisture Sensitivity Level: 1
  • Environmental: Halogen Free. Green Device
  • Flammability Rating: Epoxy Meets UL 94 V-0
  • Compliance: Lead Free Finish/RoHS Compliant
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID TA=25°C 0.35 A
Continuous Drain Current ID TA=70°C 0.27 A
Pulsed Drain Current (Note 3) IDM 1.36 A
Total Power Dissipation (Note 4) PD 0.34 W
Operating Junction Temperature Range -55 +150 °C
Storage Temperature -55 +150 °C
Thermal Resistance Junction to Ambient (Note 2) RθJA 357 °C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10µA 60 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=1mA 1.0 2.5 V
Gate-Body Leakage Current IGSS VGS=±10V, VDS=0V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V ±10 µA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V ±20 µA
Drain-Source On-Resistance RDS(on) VGS=10V, ID=300mA 1.9 2.2 Ω
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=200mA 3.0 Ω
Forward Transconductance gFS VDS=5V, ID=300mA 300 mS
Continuous Body Diode Current IS 0.34 A
Diode Forward Voltage VSD IF=300mA, dIF/dt=100A/µs 1.5 V
Reverse Recovery Time trr IF=300mA, dIF/dt=100A/µs 11 ns
Reverse Recovery Charge Qrr IF=300mA, dIF/dt=100A/µs 2.6 nC
Input Capacitance Ciss VDS=30V, VGS=10V, f=1MHz 130 pF
Output Capacitance Coss VDS=30V, VGS=10V, f=1MHz 11 pF
Reverse Transfer Capacitance Crss VDS=30V, VGS=10V, f=1MHz 16 pF
Total Gate Charge Qg VDD=30V, VGS=10V, RG=50Ω, RL=250Ω 4.4 nC
Gate-Source Charge Qgs VDD=30V, VGS=10V, RG=50Ω, RL=250Ω 3 nC
Gate-Drain Charge Qgd VDD=30V, VGS=10V, RG=50Ω, RL=250Ω 0.15 nC
Turn-On Delay Time td(on) VDS=30V, VGS=10V, ID=300mA 3 ns
Turn-On Rise Time tr VDS=30V, VGS=10V, ID=300mA 11 ns
Turn-Off Delay Time td(off) VDS=30V, VGS=10V, ID=300mA 0.25 ns
Turn-Off Fall Time tf VDS=30V, VGS=10V, ID=300mA 3.0 ns
Gate Resistance Rg 1 Ω
Dimensions (SOT-23) A MIN 2.80 3.04 mm
Dimensions (SOT-23) B MIN 2.10 2.64 mm
Dimensions (SOT-23) C MIN 1.20 1.40 mm
Dimensions (SOT-23) D MIN 0.85 1.05 mm
Dimensions (SOT-23) E MIN 1.70 2.10 mm
Dimensions (SOT-23) F MIN 0.45 0.60 mm
Dimensions (SOT-23) G MIN 0.01 0.15 mm
Dimensions (SOT-23) H MIN 0.90 1.10 mm
Dimensions (SOT-23) J MIN 0.08 0.18 mm
Dimensions (SOT-23) K MIN 0.30 0.51 mm
Dimensions (SOT-23) L MIN 0.50 0.20 mm

2506301105_MCC-2N7002KHE3-TPAU_C43942562.pdf

Related Products
quality NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency factory
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
quality IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes factory
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
quality Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions factory
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
quality Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage factory
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.