ME6968ED Dual N Channel Power MOSFET with Maximum DC Current Capability and Low On State Resistance
Key Attributes
Model Number:
ME6968ED
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
19mΩ@10V
Gate Threshold Voltage (Vgs(th)):
800mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Number:
2 N-Channel
Output Capacitance(Coss):
90pF
Input Capacitance(Ciss):
245pF
Pd - Power Dissipation:
960mW
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
ME6968ED
Package:
TSSOP-8
Product Description
Product Overview
The ME6968ED Dual N-Channel logic enhancement mode power field effect transistors utilize high cell density, DMOS trench technology, optimized for minimal on-state resistance. These devices are ideal for low-voltage applications such as power management in cellular phones, notebook computers, and other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package. They offer super high density cell design for extremely low RDS(ON) and exceptional on-resistance with maximum DC current capability.
Product Attributes
- Brand: ME (implied by product name)
- Certifications: Pb-free (ME6968ED), Green product (ME6968ED-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source On-State Resistance | RDS(ON) | 25 | m | @VGS=10V, ID=6.5A |
| 25.5 | @VGS=8V, ID=6.5A | |||
| 26 | @VGS=6V, ID=6.5A | |||
| 27 | @VGS=4.5V, ID=6.0A | |||
| 28 | @VGS=4V, ID=6.0A | |||
| 27.2 | @VGS=3V, ID=6.0A | |||
| 32 | @VGS=2.5V, ID=5.5A | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=1.5A, VGS=0V |
| Total Gate Charge | Qg | 22 | nC | VDS=10V, VGS=10V, ID=6.5A |
| 12 | VDS=10V, VGS=4.5V, ID=6.5A | |||
| 18 | ||||
| 10 | ||||
| 3.6 | ||||
| Gate-Source Charge | Qgs | 2.2 | nC | VDS=10V, VGS=10V, ID=6.5A |
| Gate-Drain Charge | Qgd | 3.6 | nC | VDS=10V, VGS=4.5V, ID=6.5A |
| Input Capacitance | Ciss | 300 | pF | VDS=15V, VGS=0V,f=1MHz |
| Output Capacitance | Coss | 90 | pF | VDS=15V, VGS=0V,f=1MHz |
| Reverse Transfer Capacitance | Crss | 26 | pF | VDS=15V, VGS=0V,f=1MHz |
| Turn-On Delay Time | td(on) | 200 | ns | VDD=10V, RL =10 ID=1A, VGEN=4.5V RG=6 |
| Turn-On Rise Time | tr | 250 | ns | VDD=10V, RL =10 ID=1A, VGEN=4.5V RG=6 |
| Turn-Off Delay Time | td(off) | 450 | ns | VDD=10V, RL =10 ID=1A, VGEN=4.5V RG=6 |
| Turn-Off Fall Time | tf | 260 | ns | VDD=10V, RL =10 ID=1A, VGEN=4.5V RG=6 |
| Gate Threshold Voltage | VGS(th) | 1.0 | V | VDS=VGS, ID=250A |
| Gate Leakage Current | IGSS | 10 | uA | VDS=0V, VGS=12V |
| Zero Gate Voltage Drain Current | IDSS | 25 | A | VDS=20V, VGS=0V, TJ=70 |
| 1 | VDS=20V, VGS=0V | |||
2410121456_MATSUKI-ME6968ED_C709740.pdf
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