MEM2310XG N Channel DMOS Trench Transistor Featuring Ultra Low On Resistance and High Speed Switching
Key Attributes
Model Number:
MEM2310XG
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Output Capacitance(Coss):
99pF
Input Capacitance(Ciss):
823pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
MEM2310XG
Package:
SOT-23
Product Description
Product Overview
The MEM2310X is an N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. It is specifically designed for low-voltage applications and low power dissipation in a subminiature SOT23 surface mount package. Key advantages include ultra-low on-resistance and suitability for high-speed switching and battery management.
Product Attributes
- Brand: Microne
- Model: MEM2310X
- Origin: www.microne.com.cn
- Technology: DMOS trench
- Package: SOT23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 30 | 35 | V | |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250uA | 0.7 | 0.88 | 1.4 | V |
| Gate-Body Leakage | IGSS | VDS=0VVGS=12V | 0.5 | 100 | nA | |
| Gate-Body Leakage | IGSS | VDS=0VVGS=-12V | -0.2 | -100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS=24V VGS=0V | 1000 | nA | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5.8A | 25 | m | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=5A | 28 | m | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=4A | 37 | m | ||
| Forward Transconductance | gFS | VDS = 5 V, ID = 5A | 10 | 15 | S | |
| Maximum Body-Diode Continuous Current | Is | 2.5 | A | |||
| Source-drain (diode forward) voltage | VSD | VGS=0V,IS=1A | 0.72 | 1.0 | V | |
| Input Capacitance | Ciss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 823 | 1030 | pF | |
| Output Capacitance | Coss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 99 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 77 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 1.2 | 3.6 | ||
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 2.7 VGEN = 10V, Rg = 3 | 7 | 14 | ns | |
| Rise Time | tr | VDD = 15 V, RL = 2.7 VGEN = 10V, Rg = 3 | 15 | 30 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 15 V, RL = 2.7 VGEN = 10V, Rg = 3 | 38 | 76 | ns | |
| Fall-Time | tf | VDD = 15 V, RL = 2.7 VGEN = 10V, Rg = 3 | 3 | 6 | ns | |
| Total Gate Charge | Qg | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 11 | 14.3 | nC | |
| Gate-Source Charge | Qgs | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 1.6 | 2.08 | nC | |
| Gate-Drain Charge | Qg d | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 2.8 | 3.64 | nC |
Application Scenarios
- Battery management
- High speed switch
- Low power DC to DC converter
2410121252_MICRONE-MEM2310XG_C82938.pdf
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