MATSUKI ME35N10 G N Channel MOSFET Power Transistor Offering High Cell Density and Low On Resistance
Key Attributes
Model Number:
ME35N10-G
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
28.1A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
17mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
233pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
4.4nF@15V
Pd - Power Dissipation:
27.8W
Gate Charge(Qg):
54.2nC@5V
Mfr. Part #:
ME35N10-G
Package:
TO-252-2
Product Description
Product Overview
The ME35N10 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device exceptionally suitable for low-voltage applications. It offers superior on-resistance and maximum DC current capability.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Certifications: Pb-free (ME35N10), Green product-Halogen free (ME35N10-G)
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Notes |
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TC=25) | ID | 28.1 | A | *The device mounted on 1in2 FR4 board with 2 oz copper | ||
| Continuous Drain Current (TC=70) | ID | 22.5 | A | *The device mounted on 1in2 FR4 board with 2 oz copper | ||
| Pulsed Drain Current | IDM | 112 | A | |||
| Maximum Power Dissipation (TC=25) | PD | 27.8 | W | *The device mounted on 1in2 FR4 board with 2 oz copper | ||
| Maximum Power Dissipation (TC=70) | PD | 17.8 | W | *The device mounted on 1in2 FR4 board with 2 oz copper | ||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance-Junction to Case | RJC | 4.5 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper | ||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | V(BR)DSS | 100 | V | |||
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 1 | 3 | V | ||
| Gate Leakage Current (VDS=0V, VGS=±20V) | IGSS | ±100 | nA | |||
| Zero Gate Voltage Drain Current (VDS=80V, VGS=0V) | IDSS | 1 | µA | |||
| Drain-Source On-State Resistance (VGS=10V, ID=20A) | RDS(ON) | 17 | 22 | mΩ | a | |
| Drain-Source On-State Resistance (VGS=4.5V, ID=16A) | RDS(ON) | 20 | 26 | mΩ | a | |
| Diode Forward Voltage (IS=12A, VGS=0V) | VSD | 1.3 | V | |||
| Total Gate Charge (VDS=80V, VGS=10V, ID=35A) | Qg | 94.7 | nC | |||
| Total Gate Charge (VDS=80V, VGS=5V, ID=35A) | Qg | 54.2 | nC | |||
| Gate-Source Charge | Qgs | 16.5 | ||||
| Gate-Drain Charge | Qgd | 20.8 | ||||
| Input Capacitance (VDS=15V, VGS=0V, F=1MHz) | Ciss | 4400 | pF | |||
| Output Capacitance | Coss | 286 | pF | |||
| Reverse Transfer Capacitance | Crss | 233 | pF | |||
| Turn-On Delay Time (VDS=50V, RL =1.5Ω, VGEN=10V, RG=4.7Ω) | td(on) | 30.3 | ns | |||
| Turn-On Rise Time | tr | 166 | ns | |||
| Turn-Off Delay Time | td(off) | 92.4 | ns | |||
| Turn-Off Fall Time | tf | 186 | ns |
Applications: DC/DC Converter, Load Switch, LCD/ LED Display inverter.
Features: RDS(ON) ≤ 22mΩ@VGS=10V, RDS(ON) ≤ 26mΩ@VGS=4.5V, Super high density cell design for extremely low RDS(ON), Exceptional on-resistance and maximum DC current capability.
Notes: a. Pulse test: pulse width≤ 300us, duty cycle≤ 2%, Guaranteed by design, not subject to production testing.
2411220101_MATSUKI-ME35N10-G_C709749.pdf
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