N channel Power LV MOSFET MCC MCQ4406A TP with RoHS Compliant lead free finish and Trench technology
Key Attributes
Model Number:
MCQ4406A-TP
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
-
Mfr. Part #:
MCQ4406A-TP
Package:
SOP-8
Product Description
Product Overview
The MCQ4406A is an N-channel Power LV MOSFET featuring Trench technology, designed for high efficiency and reliability. It is Halogen Free and RoHS Compliant, meeting stringent environmental standards. This MOSFET is suitable for applications requiring a -55C to +150C operating junction temperature range and offers excellent thermal performance with a Junction to Ambient thermal resistance of 50C/W. Its construction meets UL 94 V-0 flammability rating, making it a safe choice for various industrial applications.
Product Attributes
- Brand: MCCSEMI
- Technology: Trench Power LV MOSFET
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free. Green Device
- Flammability Rating: Epoxy Meets UL 94 V-0
- Finish: Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | 12 | A | ||
| Continuous Drain Current | ID | TA=70C | 9.6 | A | ||
| Pulsed Drain Current | IDM | (Note 3) | 48 | A | ||
| Total Power Dissipation | PD | (Note 4) | 2.5 | W | ||
| Single Pulsed Avalanche Energy | EAS | (Note 5) | 56 | mJ | ||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance, Junction to Ambient | RJA | (Note 2) | 50 | C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=10A | 8 | 12 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=5A | 15 | m | ||
| Gate Resistance | RG | f=1MHz, Open drain | 2.3 | |||
| Continuous Body Diode Current | IS | 12 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=12A | 1.2 | V | ||
| Reverse Recovery Time | trr | IF=8A, dIF/dt=100A/s | 17 | ns | ||
| Reverse Recovery Charge | Qrr | 6.5 | nC | |||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | 1035 | pF | ||
| Output Capacitance | Coss | 180 | pF | |||
| Reverse Transfer Capacitance | Crss | 155 | pF | |||
| Total Gate Charge | Qg | VDD=15V, VGS=10V, RG=3, ID=12A | 22 | nC | ||
| Gate-Source Charge | Qgs | 5.5 | nC | |||
| Gate-Drain Charge | Qg | 2.5 | nC | |||
| Turn-On Delay Time | td(on) | 6.4 | ns | |||
| Turn-On Rise Time | tr | 9 | ns | |||
| Turn-Off Delay Time | td(off) | 24 | ns | |||
| Turn-Off Fall Time | tf | 9 | ns | |||
| Forward Transconductance | gFS | VDS=5V, ID=10A | 15 | S | ||
| Dimensions (Inches) | Dimensions (mm) | Note | ||
|---|---|---|---|---|
| MIN | MAX | MIN | MAX | |
| 0.053 | 0.069 | 1.35 | 1.75 | A |
| 0.004 | 0.010 | 0.10 | 0.25 | B |
| 0.053 | 0.061 | 1.35 | 1.55 | C |
| 0.013 | 0.020 | 0.33 | 0.51 | D |
| 0.007 | 0.010 | 0.17 | 0.25 | E |
| 0.185 | 0.200 | 4.70 | 5.10 | F |
| 0.228 | 0.244 | 5.80 | 6.20 | G |
| 0.150 | 0.157 | 3.80 | 4.00 | H |
| 0.016 | 0.050 | 0.40 | 1.27 | J |
| 0 | 8 | 0 | 8 | K |
| 0.050 TYP. | 1.270 TYP. |
| Packing | Part Number | Quantity |
|---|---|---|
| Tape&Reel | MCQ4406A-TP | 4Kpcs/Reel |
2504101957_MCC-MCQ4406A-TP_C914339.pdf
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