N channel Super Junction Power MOSFET MCC MSJU11N65 TP with Low FOM and UL 94 V 0 Flammability Rating
Key Attributes
Model Number:
MSJU11N65-TP
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
340mΩ@10V,5.5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5.5pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
901pF@50V
Pd - Power Dissipation:
78W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
MSJU11N65-TP
Package:
DPAK
Product Description
Product Overview
The MSJU11N65 is an N-channel Super-Junction Power MOSFET designed for high-performance applications. It features a very low FOM (RDS(on) x Qg), an epoxy meeting UL 94 V-0 flammability rating, and Moisture Sensitivity Level 1. This device is Halogen Free available upon request and Lead Free/RoHS Compliant. It is suitable for applications requiring efficient power switching.
Product Attributes
- Brand: MCCSEMI
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Halogen Free: Available Upon Request (Suffix "-HF")
- Lead Free Finish/RoHS Compliant: Yes ("P" Suffix Designates RoHS Compliant)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current | ID | TC=25C | 11 | A | ||
| Pulsed Drain Current | IDM | Note 1 | 33 | A | ||
| Repetitive Avalanche Energy | EAS | Note 1 | 211 | mJ | ||
| Avalanche Current | IAS | Note 1 | 11 | A | ||
| Single Pulse Avalanche Energy | EAR | Note 2 | 78 | mJ | ||
| Total Power Dissipation | PD | TC=25C | 0.32 | W | ||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Thermal Resistance Junction to Ambient | Rth(j-a) | 62 | C/W | |||
| Thermal Resistance Junction to Case | Rth(j-c) | 1.6 | C/W | |||
| Electrical Characteristics @ 25C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 650 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =30V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=650V, VGS=0V | 1 | A | ||
| VDS=650V, VGS=0V, TJ=150C | 100 | A | ||||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.5 | 4 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=5.5A | 0.34 | 0.38 | ||
| Forward transconductance | gFS | VDS=10V, ID=5.5A | 7.8 | S | ||
| Dynamic Characteristics (Note 4) | ||||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHz | 901 | pF | ||
| Output Capacitance | Coss | 50 | pF | |||
| Reverse Transfer Capacitance | Crss | 5.5 | pF | |||
| Total Gate Charge | Qg | VDD =400V, ID=11A,RG=25 | 21 | nC | ||
| Gate-Source Charge | Qgs | 4.5 | nC | |||
| Gate-Drain Charge | Qgd | 7 | nC | |||
| Turn-On Delay Time | td(on) | VGS=10V, ID=11A,RG=25 | 41 | ns | ||
| Turn-On Rise Time | tr | 20 | ns | |||
| Turn-Off Delay Time | td(off) | 123 | ns | |||
| Turn-Off Fall Time | tf | 6.4 | ns | |||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Body Diode Current | IS | 9.2 | A | |||
| Pulsed Diode Forward Current | ISM | 29 | A | |||
| Body Diode Voltage | VSD | ISD=11A, VGS=0V | 0.9 | 1.2 | V | |
| Reverse Recovery Time | trr | VR=520V, IF=IS,diF/dt=100A/s | 280 | ns | ||
| Reverse Recovery Charge | Qrr | 2.8 | C | |||
| Peak Reverse Recovery Current | Irrm | 17 | A | |||
| Dimensions (DPAK) | ||||||
| DIM | INCHES | MM | MIN | MAX | MIN | MAX |
| A | 0.087 | 2.20 | 0.094 | 2.40 | ||
| B | 0.000 | 0.00 | 0.005 | 0.13 | ||
| C | 0.026 | 0.66 | 0.034 | 0.86 | ||
| D | 0.018 | 0.46 | 0.023 | 0.58 | ||
| E | 0.256 | 6.50 | 0.264 | 6.70 | ||
| F | 0.201 | 5.10 | 0.215 | 5.46 | ||
| G | 0.236 | 6.00 | 0.244 | 6.20 | ||
| H | 0.086 | 2.18 | 0.094 | 2.39 | ||
| I | 0.386 | 9.80 | 0.409 | 10.40 | ||
| J | 0.055 | 1.40 | 0.067 | 1.70 | ||
| K | 0.043 | 1.10 | 0.051 | 1.30 | ||
| L | 0.000 | 0.00 | 0.012 | 0.30 | ||
| M | 0.190 | 4.83 | ||||
| O | 0.114 | 2.90 | ||||
| Q | 0.063 | 1.60 | ||||
| V | 0.211 | 5.35 | ||||
| Ordering Information | ||||||
| Device | Packing | Part Number | ||||
| MSJU11N65 | Tape&Reel: 2.5Kpcs/Reel | MSJU11N65-TP | ||||
2008182106_MCC-MSJU11N65-TP_C725301.pdf
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