Silicon N Channel Power MOSFET Minos MDT18N20 with 130W Power Dissipation and 72A Pulsed Drain Current
Key Attributes
Model Number:
MDT18N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V,7.5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
130pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.32nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
MDT18N20
Package:
TO-252
Product Description
Product Overview
The MDT18N20 is a silicon N-Channel Enhanced Power MOSFET designed using advanced MOSFET technology. It offers reduced conduction losses, improved switching performance, and enhanced avalanche energy, making it suitable for high-speed switching applications such as SMPS and general-purpose use.
Product Attributes
- Brand: MNS (implied by www.mns-kx.com)
- Material: Silicon N-Channel
- Certifications: RoHS product
Technical Specifications
| Parameter | Symbol | TO-252 / TO-220 / TO-251 | TO-220F | Units |
| Drain-to-Source Voltage | VDSS | 200 | 200 | V |
| Continuous Drain Current (TC=25C) | ID | 18 | 18 | A |
| Continuous Drain Current (TC=100C) | ID | 11 | 11 | A |
| Pulsed Drain Current | IDM | 72 | 72 | A |
| Gate-to-Source Voltage | VGS | 30 | 30 | V |
| Single Pulse Avalanche Energy | EAS | 580 | 580 | mJ |
| Peak Diode Recovery dv/dt | dv/dt | 5.0 | 5.0 | V/ns |
| Power Dissipation (TC=25C) | PD | 130 | 42 | W |
| Derating Factor above 25C | 1.2 | 0.33 | W/ | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | -55 to 150 | |
| Maximum Temperature for Soldering | TL | 300 | 300 | |
| Junction-to-Case Thermal Resistance | RJC | 0.84 | 3.0 | /W |
| Junction-to-Ambient Thermal Resistance | RJA | 62.5 | 62.5 | /W |
| Drain to Source Breakdown Voltage | VDSS | 200 | 200 | V |
| Drain to Source Leakage Current (VDS=200V, VGS=0V, Tj=25C) | IDSS | 1 | 1 | A |
| Drain to Source Leakage Current (VDS=160V, VGS=0V, Tj=125C) | IDSS | 100 | 100 | A |
| Gate to Source Forward Leakage | IGSS(F) | 100 | 100 | nA |
| Gate to Source Reverse Leakage | IGSS(R) | -100 | -100 | nA |
| Drain-to-Source On-Resistance (VGS=10V, ID=7.5A) | RDS(ON) | 0.18 | 0.18 | |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(TH) | 4.0 | 4.0 | V |
| Forward Transconductance (VDS=15V, ID=9A) | gfs | 12 | 12 | S |
| Input Capacitance | Ciss | 1320 | 1320 | PF |
| Output Capacitance | Coss | 450 | 450 | PF |
| Reverse Transfer Capacitance | Crss | 130 | 130 | PF |
| Turn-on Delay Time | td(ON) | 15 | 15 | ns |
| Rise Time | Tr | 52 | 52 | ns |
| Turn-Off Delay Time | td(OFF) | 46 | 46 | ns |
| Fall Time | tf | 37 | 37 | ns |
| Total Gate Charge | Qg | 23 | 23 | nC |
| Gate to Source Charge | Qgs | 8 | 8 | nC |
| Gate to Drain (Miller)Charge | Qgd | 6 | 6 | nC |
| Continuous Source Current (Body Diode) | IS | 18 | 18 | A |
| Maximum Pulsed Current (Body Diode) | ISM | 72 | 72 | A |
| Diode Forward Voltage (IS=18A, VGS=0V) | VSD | 1.2 | 1.2 | V |
| Reverse Recovery Time | Trr | 350 | 350 | ns |
| Reverse Recovery Charge | Qrr | 3600 | 3600 | nC |
2410122024_Minos-MDT18N20_C5355275.pdf
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