Power MOSFET Minos MD28N50 Silicon N Channel Device with High Pulsed Current and Wide Temperature Range
Key Attributes
Model Number:
MD28N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Input Capacitance(Ciss):
1.92nF
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
MD28N50
Package:
TO-247
Product Description
Product Overview
The MD28N50 is a silicon N-Channel Enhanced Power MOSFET designed for high-performance applications. It utilizes advanced MOSFET technology to minimize conduction losses, enhance switching speeds, and improve avalanche energy capability. This transistor is well-suited for Switched-Mode Power Supplies (SMPS), high-speed switching circuits, and general-purpose applications.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Material: Silicon N-Channel
- Certifications: RoHS
Technical Specifications
| Model | Parameter | Value | Units | Conditions |
| MD28N50 | Drain-to-Source Voltage (VDS) | 500 | V | |
| Gate-to-Source Voltage (VGS) | ±30 | V | ||
| Continuous Drain Current (ID) | 28 | A | TC = 25°C | |
| Continuous Drain Current (ID) | 12.6 | A | TC = 100°C | |
| Pulsed Drain Current (IDM) | 80 | A | (Note1) | |
| Single Pulse Avalanche Energy (EAS) | 1200 | mJ | L=10mH, VDS=50V, Start TJ=25°C (Note2) | |
| Power Dissipation (PD) | 230 | W | TO-3P/TO-247 | |
| Operating Junction and Storage Temperature Range | -55 to 150 | °C | ||
| Drain-to-Source On-Resistance (RDS(ON)) | 190 | mΩ | VGS=10V, ID=28A (Max) | |
| Drain-to-Source On-Resistance (RDS(ON)) | 160 | mΩ | VGS=10V, ID=10A (Typ) (Note4) | |
| Gate Threshold Voltage (VGS(TH)) | 2.0 - 4.0 | V | VDS = VGS, ID = 250µA (Note4) | |
| Input Capacitance (Ciss) | 1920 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz | |
| Output Capacitance (Coss) | 290 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz | |
| Reverse Transfer Capacitance (Crss) | 18 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz | |
| Diode Forward Voltage (VSD) | 1.2 | V | IS=20A, VGS=0V (Note4) | |
| Ordering Codes | Package | Product Code | Packing | |
| TO-3P | MD28N50-H | Tube | ||
| TO-247 | MD28N50-W | Tube | ||
| Thermal Characteristics | Junction-to-Case (RθJC) | 0.54 | °C/W | (No FullPAK) |
| Junction-to-Ambient (RθJA) | 62.5 | °C/W | (No FullPAK) |
2507231135_Minos-MD28N50_C49424410.pdf
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