High Current 60V N Channel MOSFET Minos MDT50N06D with Low Gate Charge and Superior Heat Dissipation
Key Attributes
Model Number:
MDT50N06D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
910pF
Pd - Power Dissipation:
87W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
MDT50N06D
Package:
TO-252
Product Description
Product Overview
The MDT50N06 is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key features include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The TO-252 package provides excellent heat dissipation.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen, China (derived from contact information)
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit | ||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 50 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 200 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 87 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 120 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 175 | ||||
| Thermal Resistance,Junction-to-Case | RJC | 1.72 | /W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | 1 | µA | |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | ±100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A (Note 3) | - | 11 | 15 | mΩ |
| Forward Transconductance | gFS | VDS=25V,ID=25A | - | 25 | - | S |
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 910 | - | pF |
| Output Capacitance | Coss | - | 100 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 30 | - | pF | |
| Turn-on Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V,RGEN=5Ω | - | 26 | - | nS |
| Turn-on Rise Time | tr | - | 6 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 52 | - | nS | |
| Turn-Off Fall Time | tf | 7 | - | nS | ||
| Total Gate Charge | Qg | VDS=30V,ID=50A, VGS=10V | - | 31 | - | nC |
| Gate-Source Charge | Qgs | - | 9 | - | nC | |
| Gate-Drain Charge | Qg d | - | 5 | - | nC | |
| Diode Forward Voltage | VSD | VGS=0V,IS=50A | - | - | 1.2 | V |
2410122012_Minos-MDT50N06D_C19189962.pdf
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