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quality N Channel MOSFET MCC SI3134KL3A TP with low logic level gate drive and lead free RoHS compliant design factory
quality N Channel MOSFET MCC SI3134KL3A TP with low logic level gate drive and lead free RoHS compliant design factory

N Channel MOSFET MCC SI3134KL3A TP with low logic level gate drive and lead free RoHS compliant design

Key Attributes
Model Number: SI3134KL3A-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
700mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Pd - Power Dissipation:
900mW
Input Capacitance(Ciss):
33pF
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
SI3134KL3A-TP
Package:
DFN1006-3
Product Description

Product Overview

The SI3134KL3A is an N-Channel MOSFET designed for low logic level gate drive applications. It features a low RDS(on) for efficient switching and is built to meet stringent industry standards, including UL 94 V-0 flammability rating, 2000V ESD Human Body Model protection, and Moisture Sensitivity Level 1. This device is Halogen Free, a "Green" device, and Lead Free/RoHS Compliant, making it suitable for environmentally conscious designs. It operates within a wide temperature range of -55C to +150C.

Product Attributes

  • Brand: MCCSEMI
  • Model: SI3134KL3A
  • Type: N-Channel MOSFET
  • Certifications: UL 94 V-0 Flammability, ESD Human Body Model 2000V, Moisture Sensitivity Level 1, Halogen Free, RoHS Compliant
  • Marking Code: 1RWH

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 20 V
Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 0.35 0.75 1.1 V
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=500mA 300 m
VGS=2.5V, ID=400mA 350 m
VGS=1.8V, ID=200mA 700 m
Diode Forward Voltage VSD VGS=0V, IS=500mA 1.2 V
Input Capacitance Ciss VDS=16V,VGS=0V,f=1MHz 33 pF
Output Capacitance Coss 20 pF
Reverse Transfer Capacitance Crss 10 pF
Total Gate Charge Qg VGS=4.5V,VDS=10V,ID=1A 0.8 nC
Gate-Source Charge Qgs 0.29 nC
Gate-Drain Charge Qg 0.16 nC
Turn-On Delay Time td(on) VGS=4.5V,VDS=10V, IDS=0.5A,RG=10 4 nS
Turn-On Rise Time tr 18 nS
Turn-Off Delay Time td(off) 11.6 nS
Turn-Off Fall Time tf 24 nS
Gate-Source Leakage Current IGSS VDS=16V,VGS=0V,f=1MHz 1 A
Maximum Ratings: Operating Junction Temperature -55 150 C
Maximum Ratings: Storage Temperature -55 150 C
Maximum Ratings: Maximum Thermal Resistance (Junction to Ambient) RJA 138 C/W
Maximum Ratings: Drain-Source Voltage VDS 20 V
Maximum Ratings: Gate-Source Voltage VGS 12 V
Maximum Ratings: Drain Current-Continuous ID (Note 2) 0.75 A
Maximum Ratings: Pulsed Drain Current IDM 2.8 A
Maximum Ratings: Power Dissipation PD 0.9 W
Dimensions (DFN1006-3) A INCHES 0.018 0.022
MM 0.45 0.55
A1 INCHES 0.000 0.002
MM 0.00 0.05
b INCHES 0.018 0.022
MM 0.45 0.55
b1 INCHES 0.004 0.008
MM 0.10 0.20
c INCHES 0.005 0.007
MM 0.12 0.18
D INCHES 0.037 0.042
MM 0.95 1.075
E INCHES 0.022 0.026
MM 0.55 0.675
E1 INCHES 0.006 0.010
MM 0.15 0.25
e INCHES 0.008 0.012
MM 0.20 0.30
L INCHES 0.008 0.012
MM 0.20 0.30
L1 INCHES 0.0002 0.05
Suggested Solder Pad Layout TYP. 0.026 (0.65)

2307211757_MCC-SI3134KL3A-TP_C3288245.pdf

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