Power MOSFET Minos P50N20 MNS N Channel device designed for switching and avalanche energy handling
Key Attributes
Model Number:
P50N20-MNS
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
50A
RDS(on):
52mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
101pF
Number:
1 N-channel
Pd - Power Dissipation:
104W
Output Capacitance(Coss):
355pF
Input Capacitance(Ciss):
2.8nF
Gate Charge(Qg):
154nC
Mfr. Part #:
P50N20-MNS
Package:
TO-220
Product Description
Product Overview
The P50N20-MNS is an N-Channel Enhanced MOSFET developed using advanced MOSFET technology. This technology minimizes conduction losses, improves switching performance, and enhances avalanche energy. It is well-suited for Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS (Shenzhen Minos)
- Origin: China (Shenzhen)
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Value (Min) | Value (Typ) | Value (Max) | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | TC = 25, unless otherwise noted | -- | -- | 200 | V |
| Continuous Drain Current | ID | TC = 25, unless otherwise noted | -- | -- | 50 | A |
| Pulsed Drain Current(note1) | IDM | TC = 25, unless otherwise noted | -- | -- | 180 | A |
| Gate-Source Voltage | VGSS | TC = 25, unless otherwise noted | -- | -- | 20 | V |
| Single Pulse Avalanche Energy(note1) | EAS | TC = 25, unless otherwise noted | -- | -- | 191 | mJ |
| Avalanche Current (note1) | IAS | TC = 25, unless otherwise noted | -- | -- | 31 | A |
| Repetitive Avalanche Energy (note1) | EAR | TC = 25, unless otherwise noted | -- | -- | 124 | mJ |
| Power Dissipation (TC = 25C) | PD | TC = 25C | -- | -- | 63.7 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -- | -55 | -- | 150 | |
| Thermal Resistance | ||||||
| Thermal Resistance, Junction-to-Case | RthJC | -- | -- | -- | 1.2 | C/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | -- | -- | -- | 60 | C/W |
| Specifications | ||||||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID= 250A | 200 | -- | 230 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS = 0V, TJ= 25 | -- | -- | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS=0V, TJ= 125 | -- | -- | 100 | A |
| Gate-Source Leakage | IGSS | VGS= 20VVDS = 0V | -- | -- | 100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS= VGS, ID= 250A | 2.0 | -- | 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 20A (Note4) | -- | 47 | 52 | m |
| Forward Transconductance | gfs | VDS = 25V, ID = 20A (Note4) | -- | 16 | -- | S |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, f=1.0MHz | -- | 2800 | -- | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, f=1.0MHz | -- | 355 | -- | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, f=1.0MHz | -- | 101 | -- | pF |
| Total Gate Charge | Qg | VDD = 160V, ID = 52A, VGS =15V. RG=25 | -- | 154 | -- | nC |
| Gate-Source Charge | Qgs | VDD = 160V, ID = 52A, VGS =15V. RG=25 | -- | 13 | -- | nC |
| Gate-Drain Charge | Qg | VDD = 160V, ID = 52A, VGS =15V. RG=25 | -- | 58 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=160V, ID=52A, VGS =15V. RG=25 | -- | 46 | -- | ns |
| Turn-on Rise Time | tr | VDD=160V, ID=52A, VGS =15V. RG=25 | -- | 54 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=160V, ID=52A, VGS =15V. RG=25 | -- | 360 | -- | ns |
| Turn-off Fall Time | tf | VDD=160V, ID=52A, VGS =15V. RG=25 | -- | 96 | -- | ns |
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Source Current | ISD | Integral PN-diode in MOSFET | -- | -- | 50 | A |
| Pulsed Source Current | ISM | Integral PN-diode in MOSFET | -- | -- | 180 | A |
| Body Forward Voltage | VSD | IS= 20A, VGS = 0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V,IF = 10A, diF/dt =100A /s | -- | 152 | -- | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V,IF = 10A, diF/dt =100A /s | -- | 1 | -- | C |
2412110943_Minos-P50N20-MNS_C42411362.pdf
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