Low RDS ON N Channel Power MOSFET Minos IRLR3410TR designed for high frequency and hard switched circuits
Key Attributes
Model Number:
IRLR3410TR
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
13A
RDS(on):
120mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Input Capacitance(Ciss):
680pF
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
IRLR3410TR
Package:
TO-252
Product Description
Product Description
The IRLR3410TR is an N-Channel Power MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation. The device is 100% UIS and 100% DVDS tested.
Product Attributes
- Brand: MNS-KX (derived from www.mns-kx.com)
- Package: TO-252
- Certifications: 100% UIS TESTED, 100% DVDS TESTED
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 13 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 40 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 31 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 21 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 4.8 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5A (Note 3) | - | 110 | 120 | mΩ |
| Forward Transconductance | gFS | VDS=25V,ID=3.6A | - | 5 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 680 | - | pF |
| Output Capacitance | Coss | - | 110 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 85 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=5A, VGS=10V,RGEN=2.5Ω (Note 4) | - | 10 | - | nS |
| Turn-on Rise Time | tr | - | 7 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 34 | - | nS | |
| Turn-Off Fall Time | tf | - | 9 | - | nS | |
| Total Gate Charge | Qg | VDS=80V,ID=3A, VGS=10V | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qg | - | 5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=15A | - | - | 1.2 | V |
2410122012_Minos-IRLR3410TR_C20624232.pdf
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