N Channel MOSFET MCC MCAC16N03 TP with 7A Continuous Drain Current at 100C and Low RDS on Resistance

Key Attributes
Model Number: MCAC16N03-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
198pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.53nF@15V
Pd - Power Dissipation:
30W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
MCAC16N03-TP
Package:
DFN-8(5.7x5.1)
Product Description

Product Overview

The MCAC16N03 is an N-Channel MOSFET designed for various applications. It features an epoxy construction that meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1. This MOSFET is also Halogen Free available upon request and Lead Free/RoHS Compliant. It offers a Drain-Source Voltage of 30V and a continuous drain current of 11A at 25C (TC=25C) and 7A at 100C (TC=100C). Key electrical characteristics include a Drain-Source Breakdown Voltage of 30V, a Gate-Source Voltage of 20V, and a low Drain-Source On-Resistance (RDS(on)). The device is suitable for applications requiring efficient power switching.

Product Attributes

  • Brand: MCCSemi
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Halogen Free: Available Upon Request (Suffix "-HF")
  • Lead Free/RoHS Compliant: Yes (Suffix "P" designates RoHS Compliant)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID TC=25C 11 A
Continuous Drain Current ID TC=100C 7 A
Pulsed Drain Current IDM Pulse Width Limited by Maximum Junction Temperature. 50 A
Single Pulse Avalanche Energy EAS EAS ConditionTJ=25C,VDD=15V,VG=10V,L=0.1mH,Rg=25. 30 mJ
Total Power Dissipation PD Surface Mounted on FR4 Board, t 10 sec. 1.6 W
Operating Junction Temperature Range -55 150 C
Storage Temperature Range -55 150 C
Junction to Case Thermal Resistance Note 1. 4.2 C/W
Electrical Characteristics @ 25C (Unless Otherwise Specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 30 36 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A (Note 4) 1 1.6 3 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=10A (Note 4) 7 9 m
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=10A (Note 4) 10.5 14 m
Forward Tranconductance gFS VDS=5V, ID=8A (Note 4) 15 S
Dynamic Characteristics (Note 5)
Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHz 1530 pF
Output Capacitance Coss VDD=15V,ID=10A 250 pF
Reverse Transfer Capacitance Crss VGS=10V,RGEN=1.8 198 pF
Total Gate Charge Qg VDS=15V,VGS=10V,ID=9A 15 nC
Gate-Source Charge Qgs 3 nC
Gate-Drain Charge Qg 4.5 nC
Turn-On Delay Time td(on) 10 ns
Turn-On Rise Time tr 8 ns
Turn-Off Delay Time td(off) 30 ns
Turn-Off Fall Time tf 5 ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current IS 25 A
Body Diode Voltage VSD ISD=10A, VGS=0V (Note 4) 0.85 1.2 V
Reverse Recovery Time trr TJ=25C, IF=10A di/dt=100A/s (Note 4) 22 35 ns
Reverse Recovery Charge Qrr 12 20 nC
Forward Turn-On Time ton 5 ns

DIMENSIONS

DIM INCHES MM NOTE
A 0.035 - 0.047 0.90 - 1.20
B 0.012 - 0.020 0.30 - 0.51
C 0.007 - 0.010 0.19 - 0.25
D 0.189 - 0.209 4.80 - 5.30
D1 0.157 - 0.173 4.00 - 4.40
E 0.232 - 0.244 5.90 - 6.20
E1 0.217 - 0.228 5.50 - 5.80
e 1.27 TYP.
F 0.002 - 0.012 0.05 - 0.30
F1 0.014 - 0.030 0.35 - 0.75
G 0.002 - 0.012 0.05 - 0.30
G1 0.014 - 0.030 0.35 - 0.75
H 0.131 - 0.154 3.34 - 3.90
K 0.030 ----- 0.762 -----

Ordering Information

Device Packing Part Number
MCAC16N03 Tape&Reel: 2.5Kpcs/Reel -TP

Note: Adding "-HF" Suffix for Halogen Free, e.g. Part Number-TP-HF


2008182105_MCC-MCAC16N03-TP_C725267.pdf

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